Atomic Layer Deposition

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Atomic Layer Deposition Precursor
	Micro and Nanoelectronics

Atomic Layer Deposition (ALD) is the key technology for the semiconductor industry to keep Moore’s Law on track. ALD processes can be used for the deposition of barrier materials, nucleation layers, metallization, and high and low k dielectrics. Sigma-Aldrich is committed to advance your research with our line of ALD precursors. We also offer key precursors prepacked for use in Cambridge NanoTech Inc ALD Systems. If you can't find a suitable precursor, please see our CVD Precusrors page for additional ideas.

CVD/ALD Precursors Packaged for Deposition Systems

Addtional ALD Precursors
Materials Deposited	Element	Product Name	Metals Purity (%)	Formula Weight (g/mol)	Melting Point (ºC)	Sublimation/ Boiling Temp. (ºC)	Product Number
Al₂O₃ AlN AlP AlAs LaAlO₃ Aluminates	Al	Aluminum sec-butoxide	99.99	246.33	-	200-206/ 30 mm Hg	511609
	Al	Diethylaluminum ethoxide	97	130.17	2.5-4.5	108-109/ 10 mm Hg	256749
	Al	Trimethylaluminum	97	114.17	15	128-130/50mm Hg	257222
	Al	Tris(diethylamido)aluminum	99.99	486.74	28-31	50/ 20 mm Hg	J100030
	Al	Tris(ethylmethylamido)aluminum	99.99	402.58	-	-	J100029
MgB₂ BN, B₄C B₂O₃ B doping	B	Diborane (10% in Hydrogen)	-	27.67	-	92.5	463051
MgB₂ BN, B₄C B₂O₃ B doping	B	Trimethylboron	98.35	55.92	161.5	20.2	463094
Ga₂O₃ GaN GaP GaAs	Ga	Trimethylgallium	99.999	114.83	-15.8	92.5	J100015
Ga₂O₃ GaN GaP GaAs	Ga	Tris(dimethylamido)aluminum	98	201.95	104-105.5	55.7	546534
GeO₂ GeSi	Ge	Digermane (10% in H₂)	99.99	151.23	109	31.5	463078
	Ge	Germane	99.997	76.62	165	88.4	463027
	Ge	Tetramethylgermanium	98	132.73	-88	43-44/740 mm Hg	396354
HfO₂ Hf₃N₄	Hf	Hafnium(IV) chloride	99.9	320.3	-	-	590592
	Hf	Hafnium(IV) tert-butoxide	99.99	473.95	-	90/5 mm Hg	445541
	Hf	Tetrakis(diethylamido)hafnium(IV)	99.99	467.01	-	130/0.01 mm Hg	455202
	Hf	Tetrakis(dimethylamido)hafnium(IV)	99.99	354.8	26-29	-	455199
	Hf	Tetrakis(ethylmethylamido)hafnium(IV)	99.99	410.9	-	78/0.01 mm Hg	553123
Mg dopant in IIIV Matls	Mg	Bis(cyclopentadienyl)magnesium(II)	99.99	154.49	180	-	J100042
Mg dopant in IIIV Matls	Mg	Bis(pentamethylcyclopentadienyl)magnesium(II)	99.99	294.77	230 (dec.)	-	512540
Mn Source	Mn	Bis(ethylcyclopentadienyl)manganese	-	241.24	-	80	510637
MoS₂ MoO₂	Mo	Molybdenum hexacarbonyl	99.9	264	150	156	577766
Nb₂O₅	Nb	Niobium(V) ethoxide	99.999	318.21	5-6	142/ 0.1 mm Hg	J100036
Ni,NiO	Ni	Bis(methylcyclopentadienyl) nickel(II)	97	216.96	34-36	85-90/ 1 mm Hg	510475
Ni,NiO	Ni	Bis(ethylcyclopentadienyl)magnesium(II)	-	245.01	-	90	510483
PtO₂	Pt	Cyclopentadienyl(trimethyl) platinum(IV)	99	319.31	30-31	-	645605
Ru, RuO₂	Ru	Bis(ethylcyclopentadienyl) ruthenium(II)	99	235.29	6	100/ 0.01 mm Hg	648663
Sb Source	Sb	Tris(dimethylamido)antimony	99.99	253.98	-	32-34/ 0.45 mm Hg	553972
SiO₂ Si₃N₄ SiC SiON	Si	2,4,6,8-Tetramethylcyclotetrasiloxane	99.999	240.51	69	134	512990
	Si	Dimethoxydimethylsilane	99.999	120.23	-	81.4	556688
	Si	Disilane	99.998	62.22	132.6	14.5	463043
	Si	Methylsilane	99.9	46.15	157	57	462993
	Si	Octamethylcyclotetrasiloxane	98	296.62	17-18	175-176	235695
	Si	Silane	99.998	32.12	185	112	333891
	Si	Tris(isopropoxy)silanol	99	222.36	-	-	J100028
	Si	Tris(tert-butyoxy)silanol	99.999	264.43	63-65	205-210	553468
	Si	Tris(tert-pentoxy)silanol	99.99	306.51	-	96-99/ 2.5 mm Hg	553441
Ta₂O₅ TaN	Ta	Pentakis(dimethylamido)tantalum(V)	99.99	401.33	100 (dec.)	-	496863
Ta₂O₅ TaN	Ta	Tris(diethylamido)(tert-butylimido) tantalum(V)	99.99	468.46	-	-	521280
TiN TiO₂	Ti	Bis(diethylamino)bis(diisopropylamino) titanium(IV)	99.99	280.31	-	80/ 0.1 mm Hg	J100026
	Ti	Tetrakis(diethylamido)titanium(IV)	99.99	336.42	-	112/ 0.1 mm Hg	469866
	Ti	Tetrakis(dimethylamido)titanium(IV)	99.999	224.21	-	50/ 0.5 mm Hg	469858
	Ti	Tetrakis(ethylmethylamido) titanium(IV)	99.99	280.32	-	80/ 0.1 mm Hg	473537
W WO₂ WO₃ WC	W	Bis(tert-butylimido)bis(dimethylamido) tungsten(VI)	99.99	468.46	-	81/ 0.02 mm Hg	577936
W WO₂ WO₃ WC	W	Tungsten hexacarbonyl	99.9	351.91	150	-	472956
Y₂O₃ YBaCuO_x	Y	Tris(N,N-bis(trimethylsilyl)amide) yttrium(III)	98	570.07	161- 166	-	524514
ZnO₂	Zn	Diethylzinc	-	123.49	-28	117	256781
Zr₃N₄ ZrO₂	Zr	Tetrakis(diethylamido)zirconium(IV)	99.99	379.74	-	128/ 0.05 mm Hg	J100023
	Zr	Tetrakis(dimethylamido) zirconium(IV)	99.99	267.53	57-60	-	579211
	Zr	Tetrakis(ethylmethylamido) zirconium(IV)	99.99	323.63	-	81/ 0.1 mm Hg	553131

Atomic Layer Deposition Precursor