Gold-Coated Substrates

Chemistry

Chemical Synthesis

Biocompatible/Biodegradable

Display and Optoelectronics

Energy Source Materials

Metals and Ceramic Science

Micro and Nanoelectronics

Fl-Containing Monomers

Inks

Lithography

Lithography Materials

Nanopatterning

Photoacid Generators

Polyamic Acids

SAMS Polyelectrolytes

Silane Coupling Agents

Sol-Gel Processing

Stamps for Lithography

Stable Isotopes (ISOTEC)

SUBSTRATES
	Micro and Nanoelectronics

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Gold Coated Substrates (Au 99.999%)
Single Crystal Substrates
III-V Single Crystal Substrates
Silcon Wafers

Gold Coated Substrates (Au 99.999%)
Substrate Type	Au Surface Thickness (Å)	Adhesion Layer	Dimensions	Catalog #
Microsope slide¹	100	Titanium (99.9%)	1" X 3 "	643203
Microsope slide¹	1000	Titanium (99.9%)	1" X 3 "	643246
Glass cover slip¹	100	Titanium (99.9%)	22 mm X 22 mm	643254
Glass cover slip¹	100	Titanium (99.9%)	15 mm diam.	643289
Mica slide	2000	-	1" X 1.5"	643270
Mica slide	2000	-	1" X 3 "	643297
Silicon wafer	1000	-	4" diameter	643262
¹Soda-lime glass

Single Crystal Substrates
Composition	Formula	Orientation	Crystal Type	Unit Cell (Å)	Melting Point(°C)	Density (g/cm³)	Hardness (Moh)	Product #
Aluminum oxide single crystal substrate 99.99 %	Al₂O₃	(0001)	Hexagonal	a = 4.758, c = 12.992	2040	3.98	9	634875
Lanthanum aluminum oxide single crystal substrate	LaAlO₃	<100>	Rhombohedral < 435 °C Cubic > 435 °C	a = 5.357, c = 13.22 a = 3.821	2080 2080	6.52 6.52	5.9 5.9	634735
LSAT* 99.9+ % single crystal substrate	(LaAlO₃)_0.3(Sr₂AlTaO₆)_0.7	<100>	Cubic	a = 3.868	1840	6.74	6.5	635050
Magnesium aluminate single crystal substrate 99.99 %	MgAl₂O₄	<100>	Cubic	a = 8.083	2130	3.64	8	635073
Magnesium aluminate single crystal substrate 99.99 %	MgAl₂O₄	<110>	Cubic	a = 8.083	2130	3.64	8	634840
Magnesium aluminate single crystal substrate 99.99 %	MgAl₂O₄	<111>	Cubic	a = 8.083	2130	3.64	8	634832
Magnesium oxide 99.9+ % single crystal substrate	MgO	<100>	Cubic	a = 4.216	2852	3.58	5.8	634646
Magnesium oxide single crystal substrate	MgO	<110>	Cubic	a = 4.216	2852	3.58	5.8	634700
Magnesium oxide single crystal substrate	MgO	<111>	Cubic	a = 4.216	2852	3.58	5.8	634697
Silicon dioxide single crystal substrate 99.99 %	SiO₂	(0001)	Hexagonal	a = 4.914, c = 5.405	1610	2.684	7	634867
Strontium lanthanum aluminate single crystal substrate 99.99 %	SrLaAlO₄	<001>	Tetragonal	a = 3.756, c = 12.63	1650	5.924	–	634891
Strontium lanthanum aluminate single crystal substrate 99.9+ %	SrLaAlO₄	<100>	Tetragonal	a = 3.756, c = 12.63	1650	5.924	–	635111
Strontium titanate single crystal substrate	SrTiO₃	<100>	Cubic	a = 3.905	2080	5.175	6	634689
Strontium titanate single crystal substrate	SrTiO₃	<110>	Cubic	a = 3.905	2080	5.175	6	634670
Strontium titanate 99.99 % single crystal substrate	SrTiO₃	<111>	Cubic	a = 3.905	2080	5.175	6	638161
Titanium(IV) oxide single crystal substrate 99.99 %	TiO₂	<001>	Tetragonal	a =4.5936, c = 2.9582	1840	4.26	7	635057
Titanium(IV) oxide single crystal substrate 99.99 %	TiO₂	<100>	Tetragonal	a =4.5936, c = 2.9582	1840	4.26	7	635049
Titanium(IV) oxide single crystal substrate 99.99 %	TiO₂	<110>	Tetragonal	a =4.5936, c = 2.9582	1840	4.26	7	635065
Yttrium vanadate single crystal substrate 99.99 %	YVO₄	<110>	Tetragonal	a = 7.12, c = 6.29	1825	4.22	5	635103
*LSAT=Lanthanum Strontium Aluminum Tantalum oxide

III-V Single Crystal Substrates
Product Name	Formula	Orientation	Semiconductor Type	Carrier Concentration (cm^-3)	Mobility (cm²/V·sec)	Resistivity (Ω·cm)	EPD (cm^-2)	Product #
Gallium antiminide	GaSb	(100)	P	1.0 – 2.0 x 10¹⁷	600 – 800	~0.1	<1000	651478
Gallium arsenide	GaAs	(100)	N (semi-insulating)	–	>4500	>1 x 107	<5 x 104	651486
Gallium phosphide	GaP	(111)	N (semi-insulating)	4 – 6 x 10¹⁶	–	~ 0.3	–	651494

Silicon Wafers
Product Name	Diameter (in)	Orientation	Dopant	Conductor Type	Resistivity (Ω·cm)	Product #
Silicon wafer	2	(100)	none	P	10² – 10⁴	646687
Silicon wafer	3	(100)	none	P	10² – 10⁴	647535
Silicon wafer, doped	2	(100)	phosphorus	N	10^-3– 40	647780
Silicon wafer, doped	3	(100)	phosphorus	N	10^-3– 40	647802
Silicon wafer, doped	2	(100)	boron	P	10^-3– 40	647675
Silicon wafer, doped	3	(100)	boron	P	10^-3– 40	647764
Silicon wafer	2	(111)	none	P	10² – 10⁴	647101
Silicon wafer	3	(111)	none	P	10² – 10⁴	647543
Silicon wafer, doped	2	(111)	phosphorus	N	10^-3– 40	647799
Silicon wafer, doped	3	(111)	phosphorus	N	10^-3– 40	647810
Silicon wafer, doped	2	(111)	boron	P	10^-3– 40	647705
Silicon wafer, doped	3	(111)	boron	P	10^-3– 40	647772

SUBSTRATES