Collaborative Research Projects

Compound Semiconductor
 

 INDOT SAFC Hitech

  • Title: MOCVD technology for production of Indium Nitride based nanophotonic devices
  • Partners: Aixtron, SAES Getters, Montpellier Uni
  • Summary: The main project objective is to develop production technologies for InN quantum dot fabrication using MOCVD. This material has huge potential for a wide range of applications but controlled epitaxial deposition is required to move the area forward. In the project chemical advances will be employed along with equipment optimisation to develop a reliable technology to study mechanistic issues and allow novel device production to be performed. Both individual and single source precursors will be evaluated to establish the optimum system.

 ETOE

  • Title: Extended temperature optoelectronics
  • Partners: CIP, Bookham, LSA, Sheffield & Surrey Uni
  • Summary: The project goal is develop a reliable technology for higher temperature operation of long wavelength optoelectronic components. To investigate advanced integrated devices a step change in the performance of semi-insulating InP is required and SAFC Hitech's contribution will be to provide alternative precursors to allow controlled doping. Ruthenium has been identified as the most promising material and will be the focus of experiments to achieve the desired properties of the deposited films for the end applications.