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Advanced materials (Deerfield Beach, Fla.)

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2).


PMID 26140355

Abstract

The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.