CAS Number 1590-87-0
Linear Formula Si2H6
Molecular Weight 62.22
EC Number 216-466-5
MDL number MFCD00054678
PubChem Substance ID 24869889
Popular Documents: Specification Sheet (PDF)
| Related Categories | CVD and ALD Precursors by Metal, Chemical Synthesis, Gases, Materials Science, Micro/NanoElectronics, |
| grade | electronic grade |
| form | gas |
| impurities | ≤50 ppm Higher silanes |
| <0.2 ppm Chlorosilanes | |
| <1 ppm Argon (Ar) + Oxygen (O2) | |
| <1 ppm Carbon dioxide (CO2) | |
| <1 ppm Nitrogen (N2) |
Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD).2 Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium.3 Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.4
Atomic number of base material: 14 Silicon
20 g in ss cylinder
Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.1
Stainless steel regulators Z527416 or Z527424 are recommended.
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