463043 Aldrich

Disilane

electronic grade

Properties

Related Categories CVD and ALD Precursors by Metal, Chemical Synthesis, Gases, Materials Science, Micro/NanoElectronics,
grade   electronic grade
form   gas
impurities   ≤50 ppm Higher silanes
  <0.2 ppm Chlorosilanes
  <1 ppm Argon (Ar) + Oxygen (O2)
  <1 ppm Carbon dioxide (CO2)
  <1 ppm Nitrogen (N2)
  <1 ppm THC
  <1 ppm Water
  <5 ppm Siloxanes
bp   −14.5 °C(lit.)
mp   −132.6 °C(lit.)
transition temp   critical temperature 150.9 °C

Description

Features and Benefits

Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD).2 Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium.3 Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.4

General description

Atomic number of base material: 14 Silicon

Packaging

20 g in ss cylinder

Application

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.1

Recommended products

Stainless steel regulators Z527416 or Z527424 are recommended.

Price and Availability

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