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303518 Aldrich

Tantalum(V) oxide

99% trace metals basis

Synonym: Tantalum pentoxide

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Properties

Related Categories Catalysis and Inorganic Chemistry, Chemical Synthesis, Materials Science, Metal and Ceramic Science, Oxides,
InChI Key   PBCFLUZVCVVTBY-UHFFFAOYSA-N
assay   99% trace metals basis
form   powder
density   8.2 g/mL at 25 °C(lit.)
Featured Industry   Battery Manufacturing

Description

Packaging

100 g in poly bottle

25 g in glass bottle

Application

Tantalum oxide is intermixed with silicon in gate dielectric structures. It may be used to synthesize hexagonally packed mesoporous tantalum oxide molecular sieves.Ion-beam sputter deposition of tantalum oxide films was investigated for possible optical coating applications.It may be used in making optical glass for lenses and in electronic circuits.

General description

Tantalum pentoxide is dielectric in nature making it useful for making capacitors in the electronics industry.

Price and Availability

Safety & Documentation

Safety Information

RIDADR 
NONH for all modes of transport
WGK Germany 
nwg
RTECS 
WW5855000

Documents

Certificate of Analysis

Certificate of Origin

Protocols & Articles

Articles

Tutorial in Microelectronics and Nanoelectronics

Barrier Materials and Precursors High κ Dielectric Materials Deposition Techniques Chemical Vapor Deposition (CVD) Atomic Layer Deposition (ALD)
Keywords: Adhesion, Atomic layer deposition, Chemical reactions, Chemical vapor deposition, Chromatin immunoprecipitation, Deposition, Diffusion, Gas chromatography, Inductively coupled plasma, Ligands, Mass spectrometry, Melting, Microelectronics, Nuclear magnetic resonance spectroscopy, Oxidations, Reductions, Semiconductor, Solvents, Substitutions, Tissue microarrays, transformation

Peer-Reviewed Papers
15

References

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