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463019 Aldrich

Silicon tetrafluoride

electronic grade, ≥99.99%

Synonym: Silicon(IV) fluoride

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Properties

Related Categories CVD and ALD Precursors by Metal, Chemical Synthesis, Gases, Materials Science, Micro/NanoElectronics,
grade   electronic grade
InChI Key   ABTOQLMXBSRXSM-UHFFFAOYSA-N
assay   ≥99.99%
impurities   <0.5 ppm Carbon monoxide (CO)
  <1 ppm Argon + oxygen (Ar + O2)
  <1 ppm Carbon dioxide (CO2)
  <10 ppm Methane (CH4)
  <3 ppm Nitrogen (N2)
  <50 ppm Hydrogen fluoride (HF)
bp   −86 °C(lit.)
mp   −90 °C(lit.)
transition temp   critical temperature −14.2 °C
density   3.57 g/mL at 25 °C(lit.)

Description

Application

Silicon tetrafluoride is used in ion-implantation processes and as a precursor to fluorinated silica via plasma-assisted CVD. Mixtures of SiF4-SiH4-H2 have recently been used to deposit polycrystalline silicon thin films via remote plasma chemical vapor deposition (RPCVD). Such fluorinated thin films show visible photoluminescence (PL) at room temperature.

Packaging

100 g in steel cylinder

Recommended products

Monel control valves Z261793, Z261807 or Monel gas regulators Z405981, Z406007 are recommended.

Price and Availability

Safety & Documentation

Safety Information

Symbol 
Signal word 
Danger
Hazard statements 
Precautionary statements 
Supplemental Hazard Statements 
Contact with water liberates toxic gas., Reacts violently with water.
RIDADR 
UN 1859 8(2.3)
WGK Germany 
3
RTECS 
VW2327000
Protocols & Articles
Peer-Reviewed Papers
15

References

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