|Related Categories||Boranes, CVD and ALD Precursors by Metal, Chemical Synthesis, Gases, Materials Science,|
|assay||9-11% (balance hydrogen)|
|99.99% (diborane only)|
|concentration||10% in hydrogen|
Dibrorane gas is used primarily as a p-type dopant in the deposition of eptaxial and amorphous silicon thin films.
Useful as a p-type dopant for the deposition of silicon-containing thin films.
Atomic number of base material: 5 Boron
48 L in steel cylinder
Stainless steel regulators Z527416 or Z527424 are recommended.
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2.0 M in THF
1.0 M in THF, contains 0.005 M N-Isopropyl-N-methyl-tert-butylamine as stabilizer
1.0 M in THF
10% in helium, electronic grade
Certificate of Analysis
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