|Related Categories||Boranes, CVD and ALD Precursors by Metal, Chemical Synthesis, Gases, Materials Science,|
|assay||9-11% (balance hydrogen)|
|99.99% (diborane only)|
|concentration||10% in hydrogen|
Dibrorane gas is used primarily as a p-type dopant in the deposition of eptaxial and amorphous silicon thin films.
Useful as a p-type dopant for the deposition of silicon-containing thin films.
Atomic number of base material: 5 Boron
48 L in steel cylinder
Stainless steel regulators Z527416 or Z527424 are recommended.
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2.0 M in THF
1.0 M in THF, contains 0.005 M N-Isopropyl-N-methyl-tert-butylamine as stabilizer
1.0 M in THF
10% in helium, electronic grade
Certificate of Analysis
High Purity CVD Gases are used in the deposition of amorphous and epitaxial silicon, SiGe alloys, and dielectrics as well as the manufacture of integrated circuits and photovolatics. The gases are al...
Chemfiles Volume 4 Article 3
Keywords: Chemical vapor deposition, Deposition
Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand. Conventional crystalline silicon solar cells have demonstrated remark...
Material Matters Volume 5 Article 4
Keywords: Absorption, Chemical vapor deposition, Degradations, Deposition, Mass spectrometry, Nuclear magnetic resonance spectroscopy, Purification, Semiconductor, Solar cells, Spectroscopy, Tissue microarrays, Vaporization
No-observed-effect level of diborane on the respiratory organs of male mice in acute and subacute inhalation experiments. Nomiyama T, Omae K, Uemura T, et al. Sangyo. Eiseigaku Zasshi 37(3), 157-60, (1995)
Generalizing the breakdown of the maximum hardness and minimum polarizabilities principles for nontotally symmetric vibrations to non-pi-conjugated organic molecules. Torrent-Sucarrat M, Duran M, Luis JM, et al. J. Phys. Chem. A 109(4), 615-21, (2005)
Solution-phase simultaneous addition of functionalities (SPSAF) and chemical transformation to prepare N,N'-disubstituted piperazine libraries. Kung PP and Cook PD Biotechnol. Bioeng. 61(2), 119-25, (1998)
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