634875 Aldrich

Aluminum oxide

single crystal substrate, <0001>

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Synonym: Alumina, Sapphire

Properties

Related Categories Aluminum, Electronic Materials, Materials Science, Metal and Ceramic Science, Micro/NanoElectronics,
description   Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)
  Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)
  Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)
  Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)
  Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)
  Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)
  single side polished
form   single crystal substrate
hardness   9 mohs
size   10 mm × 10 mm × 0.5 mm
mp   2040 °C(lit.)
semiconductor properties   <0001>

Description

Packaging

1, 5 ea in rigid mailer

Physical form

Crystalline, hexagonal (a = 4.758 Å, c = 12.992)

Features and Benefits

Common substrate for III-V nitrides as well as many other epitaxial films.

Physical properties

thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis

Price and Availability

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