Synonym: Alumina, Sapphire
CAS Number 1344-28-1
Linear Formula Al2O3
Molecular Weight 101.96
EC Number 215-691-6
MDL number MFCD00003424
PubChem Substance ID 24882698
Popular Documents: Specification Sheet (PDF)
| Related Categories | Aluminum, Electronic Materials, Materials Science, Metal and Ceramic Science, Micro/NanoElectronics, |
| description | Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom) |
| Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom) | |
| Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom) | |
| Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom) | |
| Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom) | |
| Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom) | |
| single side polished |
1, 5 ea in rigid mailer
Crystalline, hexagonal (a = 4.758 Å, c = 12.992)
Common substrate for III-V nitrides as well as many other epitaxial films.
thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis
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wafer (single side polished), <100>, N-type, contains No dopant, diam. × thickness 2 in. × 0.5 mm
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