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698431 Aldrich

Tetrakis(dimethylamido)tin(IV)

99.9% trace metals basis

Synonym: Tin(IV) dimethylamide

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Properties

Related Categories CVD and ALD Precursors by Metal, Materials Science, Micro/NanoElectronics, Tin, Vapor Deposition Precursors More...
InChI Key   WHXTVQNIFGXMSB-UHFFFAOYSA-N
assay   99.9% trace metals basis

Description

General description

Atomic number of base material: 50 Tin

Packaging

1 g in glass bottle

Price and Availability

Safety & Documentation

Safety Information

Symbol 
Signal word 
Danger
Hazard statements 
Precautionary statements 
RIDADR 
UN 2924 8(3) / PGII
WGK Germany 
3
Flash Point(F) 
19.4 °F
Flash Point(C) 
-7 °C
Protocols & Articles

Articles

High Purity Metalorganic Precursors for CPV Device Fabrication

Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand. Conventional crystalline silicon solar cells have demonstrated remark...
Ravi Kanjolia
Material Matters Volume 5 Article 4
Keywords: Absorption, Chemical vapor deposition, Degradations, Deposition, Mass spectrometry, Nuclear magnetic resonance spectroscopy, Purification, Semiconductor, Solar cells, Spectroscopy, Tissue microarrays, Vaporization

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