Bis(methyl-η5−cyclopentadienyl)methoxymethylhafnium
packaged for use in deposition systems
DOWNLOAD MSDS (PDF)Synonym: HfD-CO4
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Linear Formula HfCH3(OCH3)[C5H4(CH3)]2
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MDL number MFCD16875686
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Popular Documents: Specification Sheet (PDF)
Properties
| Related Categories | 72: Hafnium, CVD and ALD Precursors Packaged for Deposition Systems, CVD and ALD Precursors by Metal, Hafnium, Materials Science, |
| form | liquid |
| color | yellow |
| bp | 105 °C/0.3-0.4 mmHg(lit.) |
| density | 1.63 g/mL±0.01 g/mL at 25 °C(lit.) |
Description
Frequently Asked Questions
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Application
Advanced precursor for atomic layer deposition of HfO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.1 Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.2
Features and Benefits
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
General description
Atomic number of base material: 72 Hafnium
Packaging
10 g in ss cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
Protocols & Applications
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