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759562 Aldrich

Tris(dimethylamino)silane

packaged for use in deposition systems

Synonym: Tris(dimethylamido)silane, (Me2N)3SiH, N,N,N′,N′,N′′, N′′-Hexamethylsilanetriamine, N,N,N′,N′,N′′,N′′-Hexamethylsilanetriamine, TDMAS, Tris(dimethylamido)silane, Tris(dimethylamino)silane

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Properties

Related Categories CVD and ALD Precursors Packaged for Deposition Systems, Materials Science, Micro/NanoElectronics, Silane, Vapor Deposition Precursors More...
bp   142 °C(lit.)
mp   −90 °C(lit.)
density   0.838 g/mL at 25 °C(lit.)

Description

Frequently Asked Questions

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Application

Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.

Packaging

25 g in ss cylinder

Price and Availability

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Safety & Documentation

Safety Information

Symbol 
Signal word 
Danger
Hazard statements 
Precautionary statements 
WGK Germany 
3
Flash Point(F) 
17.6 - 32 °F
Flash Point(C) 
-8 - 0 °C

Protocols & Articles

Peer-Reviewed Papers

References

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Boudreau; M.; Boumerzoug; M.; Mascher; P.; Jessop; P. E. Appl. Phys. Lett. 22th ed., 63, 3014, (1993)

Hirose; F.; Kinoshita; Y.; Shibuya; S.; et al Thin Solid Films 1st ed., 519, 270, (2011)

The acute toxicity of tris(dimethylamino)silane. Ballantyne B, Dodd DE, Myers RC, et al. Toxicol. Ind. Health 5(1), 45-54, (1989)

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