759562 Aldrich


packaged for use in deposition systems

Synonym: Tris(dimethylamido)silane, (Me2N)3SiH, N,N,N′,N′,N′′, N′′-Hexamethylsilanetriamine, N,N,N′,N′,N′′,N′′-Hexamethylsilanetriamine, TDMAS, Tris(dimethylamido)silane, Tris(dimethylamino)silane


Related Categories CVD and ALD Precursors Packaged for Deposition Systems, Materials Science, Micro/NanoElectronics, Silane, Vapor Deposition Precursors More...
bp   142 °C(lit.)
mp   −90 °C(lit.)
density   0.838 g/mL at 25 °C(lit.)


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Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.


25 g in ss cylinder

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