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759562 Aldrich

Tris(dimethylamino)silane

packaged for use in deposition systems

Synonym: Tris(dimethylamido)silane, (Me2N)3SiH, N,N,N′,N′,N′′, N′′-Hexamethylsilanetriamine, N,N,N′,N′,N′′,N′′-Hexamethylsilanetriamine, TDMAS, Tris(dimethylamido)silane, Tris(dimethylamino)silane

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Properties

Related Categories CVD and ALD Precursors Packaged for Deposition Systems, Materials Science, Micro/NanoElectronics, Silane, Vapor Deposition Precursors More...
bp   142 °C(lit.)
mp   −90 °C(lit.)
density   0.838 g/mL at 25 °C(lit.)

Description

Frequently Asked Questions

Frequently Asked Questions are available for this Product.

Application

Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.

Packaging

25 g in stainless steel cylinder

Price and Availability

Safety & Documentation

Safety Information

Symbol 
Signal word 
Danger
Hazard statements 
Precautionary statements 
RIDADR 
UN3398 - DOT UN3399 class 4.3 - PG 2 - Organometallic substance, liquid, water-reactive, HI: all (not BR)
WGK Germany 
3
Flash Point(F) 
17.6 - 32 °F
Flash Point(C) 
-8 - 0 °C
Protocols & Articles
Peer-Reviewed Papers
15

References

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