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Micro & Nanoelectronics

Substrates Products for Micro & Nanoelectronics


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Gold Coated Substrates (Au 99.999%)
Single Crystal Substrates
III-V Single Crystal Substrates
Silcon Wafers
 
Gold Coated Substrates (Au 99.999%)
Substrate Type Au Surface Thickness (Å) Adhesion Layer Dimensions Catalog #
Microsope slide1 100 Titanium (99.9%) 1" X 3 " 643203
Microsope slide1 1000 Titanium (99.9%) 1" X 3 " 643246
Glass cover slip1 100 Titanium (99.9%) 22 mm X 22 mm 643254
Glass cover slip1 100 Titanium (99.9%) 15 mm diam. 643289
Mica slide 2000 - 1" X 1.5" 643270
Mica slide 2000 - 1" X 3 " 643297
Silicon wafer 1000 - 4" diameter 643262
1Soda-lime glass

Single Crystal Substrates
Composition Formula Orientation Crystal Type Unit Cell (Å) Melting Point(°C) Density (g/cm3) Hardness (Moh) Product # 
Aluminum oxide single crystal substrate 99.99 % Al2O3 (0001) Hexagonal a = 4.758,
c = 12.992
2040 3.98 9 634875
Lanthanum aluminum oxide single crystal substrate LaAlO3 <100>  Rhombohedral < 435 °C

Cubic > 435 °C

a = 5.357,
c = 13.22


a = 3.821
2080

2080

6.52

6.52

5.9

5.9

634735
LSAT* 99.9+ % single crystal substrate (LaAlO3)0.3(Sr2AlTaO6)0.7 <100> Cubic  a = 3.868 1840 6.74 6.5 635050
Magnesium aluminate single crystal substrate  99.99 % MgAl2O4 <100> Cubic a = 8.083 2130 3.64  8 635073
Magnesium aluminate single crystal substrate 99.99 % MgAl2O4 <110> Cubic a = 8.083 2130  3.64  8 634840
Magnesium aluminate single crystal substrate  99.99 % MgAl2O4 <111> Cubic a = 8.083 2130  3.64  8 634832
Magnesium oxide 99.9+ % single crystal substrate MgO <100> Cubic a = 4.216 2852 3.58  5.8 634646
Magnesium oxide single crystal substrate MgO <110> Cubic a = 4.216 2852 3.58  5.8 634700
Magnesium oxide single crystal substrate MgO <111> Cubic a = 4.216 2852 3.58  5.8 634697
Silicon dioxide single crystal substrate  99.99 % SiO2 (0001) Hexagonal a = 4.914,
c = 5.405
1610 2.684 7 634867
Strontium lanthanum aluminate single crystal substrate 99.99 % SrLaAlO4 <001> Tetragonal a = 3.756,
c = 12.63
1650 5.924  – 634891
Strontium lanthanum aluminate single crystal substrate  99.9+ % SrLaAlO4 <100> Tetragonal a = 3.756,
c = 12.63
1650 5.924 635111
Strontium titanate single crystal substrate SrTiO3 <100> Cubic

 

a = 3.905 2080 5.175 6 634689
Strontium titanate single crystal substrate SrTiO3 <110> Cubic a = 3.905 2080 5.175 6 634670
Strontium titanate 99.99 % single crystal substrate SrTiO3 <111>  Cubic a = 3.905 2080 5.175 6 638161
Titanium(IV) oxide single crystal substrate  99.99 % TiO2 <001> Tetragonal

 

a =4.5936,
c = 2.9582
1840 4.26 7 635057
Titanium(IV) oxide single crystal substrate  99.99 % TiO2 <100> Tetragonal

a =4.5936,
c = 2.9582

1840 4.26 7 635049
Titanium(IV) oxide single crystal substrate  99.99 % TiO2 <110> Tetragonal

a =4.5936,
c = 2.9582

1840 4.26 7 635065
Yttrium vanadate single crystal substrate  99.99 % YVO4 <110> Tetragonal a = 7.12,
c = 6.29
1825 4.22  5 635103
*LSAT=Lanthanum Strontium Aluminum Tantalum oxide
III-V Single Crystal Substrates
Product Name Formula Orientation Semiconductor Type Carrier Concentration (cm-3) Mobility (cm2/V·sec) Resistivity (Ω·cm) EPD (cm-2) Product # 
Gallium antiminide GaSb (100) P

1.0 – 2.0 x 1017

600 – 800 ~0.1 <1000 651478
Gallium arsenide GaAs (100) N (semi-insulating) >4500 >1 x 107 <5 x 104 651486
Gallium phosphide GaP (111) N (semi-insulating) 4 – 6 x 1016 ~ 0.3 651494
Silicon  Wafers
Product Name Diameter (in) Orientation Dopant Conductor Type Resistivity (Ω·cm) Product # 
Silicon wafer 2 (100)  none P  102 – 104  646687
Silicon wafer 3  (100)  none P  102 – 104  647535
Silicon wafer, doped  2 (100)  phosphorus  N  10-3 – 40  647780
Silicon wafer, doped 3 (100) phosphorus N 10-3 – 40  647802
Silicon wafer, doped 2 (100)  boron P 10-3 – 40  647675
Silicon wafer, doped 3 (100)  boron P 10-3 – 40  647764
Silicon wafer 2 (111)  none P  102 – 104  647101
Silicon wafer 3 (111)  none P  102 – 104  647543
Silicon wafer, doped 2 (111)  phosphorus N 10-3 – 40  647799
Silicon wafer, doped 3 (111) phosphorus N 10-3 – 40  647810
Silicon wafer, doped 2 (111)  boron P 10-3 – 40  647705
Silicon wafer, doped 3 (111)  boron P 10-3 – 40  647772