Aldrich Materials Science offers high-quality precursors for ALD safely packaged in steel cylinders suitable for use with a variety of deposition systems. They may be used in liquid injection systems as a dilute solution and combined with a variety of other sources to deposit mixed oxides. (Figure 2
Additional information about other vapor deposition techniques such as physical vapor deposition (PVD) can be found in our physical vapor deposition spotlight.Click here to watch our video on thin film deposition by ALD methods.Advanced Precursors for HfO2 and ZrO2 Thin Films
Aldrich Materials Science is proud to offer a series of new precursors for the deposition of hafnium and zirconium oxide by Atomic Layer Deposition (ALD), which have been developed by SAFC Hitech and include:
These novel precursors are compatible with a variety of oxidants in ALD growth processes across a wide temperature range, exhibiting self limiting growth up to 400°C.4
Their volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
Hafnium and zirconium oxides are leading candidate to replace silicon dioxide as the gate oxide in a variety of semiconductor and energy applications.5
Excellent properties of HfO2 and ZrO2 films make them especially attractive for the gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.6
Please refer to the table below for the Vapor Pressure Curve of each of the Hf and Zr precursors. Additional physical properties are available on the product detail pages.
1. Material Matters, 2008, v.3, No.2
2. Material Matters, 2006, v.1, No.3
3. Atomic Layer Deposition Applications 5., Eds.: S. De Gendt, S. F. Bent, A. Delabie, J. W. Elam, S.B.Kang, O.van der Straten, A. Londergan; The Electrochemical Society, Salem, MA, 2009, 411 p.
4. Heys, P.; Williams, P.; Song, Fuquan. Cyclopentadienyl Type Hafnium and Zirconium Precursors and Use Thereof in Atomic Layer Deposition. WO Patent 2006/131751, June 6, 2006.
5. Wilk, G.D; Wallace, R.M.; Anthony, J.M. J. Appl. Phys. 2001, 89, 5243
6. Gutsche, M.; Seidl, H.; Luetzen, J.; Birner, A.; Hecht, T.; Jakschik, S.; Kerber, M.; Leonhardt, M.; Moll, P.; Pompl, T.; Reisinger, H.; Rongen, S.; Saenger, A.; Schroeder, U.; Sell, B.; Wahl, A.; Schumann, D. In Technical Digest of the International Electron Device Meeting, Washington, DC, Dec 2-5, 2001; 18.6.1.