Fabrication of Poly(triaryl amine) Field-effect Transistors

Product Description


Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is an amorphous p-type polymer semiconductor.1, 2 It may be used to fabricate field-effect transistors (FETs). PTAA is also useful as a hole transport material in organic light emitting diodes (OLEDs).

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Precautions and Disclaimer

This product is for R&D use only, not for drug, household, or other uses. Please consult the Safety Data Sheet for information regarding hazards and safe handling practices.

Storage/Stability

Store the product at room temperature.

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Procedure

Fabrication of PTAA field-effect transistors (FETs)

Bottom-gate bottom-contact FETs were fabricated in a nitrogen atmosphere on highly doped Si-wafers with a thermally grown 250 nm SiO2 layer. The two layers served as the gate electrode and gate insulator. Au source and drain electrodes (30 nm thick) were defined by standard photolithography:

channel length (L) = 10 mm
channel width (W) = 10 mm

Prior to deposition of the PTAA polymer layer, the Si-wafers were treated with octyltrichlorosilane (OTS-18, Catalog Number 104817 ) by immersing them in 10 mM solutions in toluene for 15 minutes at 60 °C.

A homogeneous solution of PTAA was prepared in toluene at room temperature containing 1.0 wt% of the polymer. This solution was deposited via spin-coating at 500 rpm for 30 seconds followed by 2,000 rpm for 50 seconds.

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Results

Electrical characterization of the PTAA FETs was conducted in a nitrogen atmosphere with a HP4155B semiconductor parameter analyzer. Field-effect mobilities were calculated from transfer characteristics (saturation regime) employing the relation:3


Isd is the source-drain current (saturation regime) 
Vg and Vsd gate and soxce-drain voltage, respectively 
Ci the insulator capacitance 
W and L the channel width and length 
V0 the turn-on voltage

Transfer and output curves for PTAA transistors are shown in Figures 1 and 2.

Figure 1. Transfer output curves for PTAA transistors corresponding to field effect mobility of 4 x 10–3 cm2/Vs.

Figure 2. Output curves for PTAA transistors corresponding to field effect mobility of 4 x 10–3 cm2/Vs.


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Materials

     

References

  1. Chabinyc, M.L. et al., MRS Bull., 7th ed., 33, 683, (2008)
  2. Veres, J. et al., Adv. Funct. Mater., 13, 199, (2003). 
  3. Brown, A.R. et al., Synth. Met., 88, 37 (1997).

Data courtesy of Dr. Iain McCulloch, Imperial College London and Flexink, Inc.

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