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Merck

666610

Tetrakis(dimethylamido)hafnium(IV)

packaged for use in deposition systems

Synonym(s):

TDMAH, Tetrakis(dimethylamino)hafnium(IV)

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25 G

€ 2.420,00

€ 2.420,00


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About This Item

Linear Formula:
[(CH3)2N]4Hf
CAS Number:
Molecular Weight:
354.79
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:

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Product Name

Tetrakis(dimethylamido)hafnium(IV), packaged for use in deposition systems

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

assay

≥99.99% (trace metals analysis)

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

Quality Level

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This Item
455199455202553123
form

low-melting solid

form

low-melting solid

form

liquid

form

liquid

assay

≥99.99% (trace metals analysis)

assay

≥99.99%

assay

99.99%

assay

≥99.99% trace metals basis

mp

26-29 °C (lit.)

mp

26-29 °C (lit.)

mp

-

mp

<-50 °C

density

1.098 g/mL at 25 °C

density

1.098 g/mL at 25 °C

density

1.249 g/mL at 25 °C (lit.)

density

1.324 g/mL at 25 °C (lit.)

reaction suitability

core: hafnium

reaction suitability

core: hafnium

reaction suitability

core: hafnium

reaction suitability

core: hafnium

Quality Level

100

Quality Level

100

Quality Level

100

Quality Level

200

Application

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.[1][2][3][4]

General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.[1][2][3][4]

pictograms

FlameCorrosion

signalword

Danger

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

supp_hazards

Storage Class

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk

WGK 3

flash_point_f

109.4 °F - closed cup

flash_point_c

43 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges


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Applied Physics Letters, 91, 193503-193503 (2007)
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Hausmann DM, Gordon RG
Journal of Crystal Growth, 249, 251-261 (2003)
High Purity Metalorganic Precursors for CPV Device Fabrication
Rushworth S
Material Matters, 5(4) null
The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition
Monsma D, Becker J
Material Matters, 1(3), 5-5 (2006)

Articles

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

High Purity Metalorganic Precursors for CPV Device Fabrication

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  1. What is the Department of Transportation shipping information for this product?

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    1. Transportation information can be found in Section 14 of the product's (M)SDS.To access the shipping information for this material, use the link on the product detail page for the product.

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