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215619

Sigma-Aldrich

Silicon

powder, −325 mesh, 99% trace metals basis

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Fórmula linear:
Si
Número CAS:
Peso molecular:
28.09
Número CE:
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

Ensaio

99% trace metals basis

forma

powder

tamanho de partícula

−325 mesh

pb

2355 °C (lit.)

pf

1410 °C (lit.)

densidade

2.33 g/mL at 25 °C (lit.)

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Este Item
GF37993595GF29940105GF41906167
Silicon powder, −325 mesh, 99% trace metals basis

Sigma-Aldrich

215619

Silicon

Silicon rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%

GF37993595

Silicon

Silicon lump, 5 mm max. lump size, weight 50 g, purity 99.99%

GF29940105

Silicon

Silicon sphere, 0.48 mm diameter, 50 pcs, tolerance +/-2.5um

GF41906167

Silicon

form

powder

form

rod

form

lumps

form

spheres

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

particle size

−325 mesh

particle size

-

particle size

-

particle size

-

Descrição geral

Silicon powder is a fine, gray powder. This silicon powder has been passed through a 325-mesh screen, meaning that the particles are small enough to pass through a sieve with openings that are approximately 44 thousandths of an inch in diameter. Silicon is a chemical element and is a hard, brittle, metallic-gray solid that is highly resistant to chemical attack and has a high melting point. Silicon is the second most abundant element in the Earth’s crust and is found in a variety of minerals.

Aplicação

Silicon can be used as anode material in lithium-ion batteries.

It can be used to fabricate Al2O3-C refractories. The silicon powder generates β-Sialon whiskers which imparts high-temperature strength, slag resistance and thermal shock resistance of the refractories.

It can be incorporated into high-densitypolyethylene (HDPE) polymer composites. The addition of silicon powder enhancesthermal stability and thermal conductivity of composites.

Pictogramas

Flame

Palavra indicadora

Warning

Frases de perigo

Declarações de precaução

Classificações de perigo

Flam. Sol. 2

Código de classe de armazenamento

4.1B - Flammable solid hazardous materials

Classe de risco de água (WGK)

WGK 3

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type N95 (US)


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Exemplo

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Número do produto
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1000309185

inserir como 1.000309185)

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Silicon powder, 45 max. part. size (micron), purity 99.95%, weight 200 g

GF81157091

Silicon

Silicon powder, 45 max. part. size (micron), weight 100 g, high purity 99.998%

GF64953614

Silicon

Silicon powder, max. particle size 45 micron, weight 50 g, high purity 99.998%

GF46525620

Silicon

Silicon powder, 150 max. part. size (micron), weight 200 g, purity 97.5%

GF63403152

Silicon

Silicon monoxide powder, −325 mesh

Sigma-Aldrich

262951

Silicon monoxide

Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal

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