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TMA, Aluminum trimethanide
Fórmula linear:
Número CAS:
Peso molecular:
Número EC:
Número MDL:
ID de substância PubChem:

Nível de qualidade


pressão de vapor

69.3 mmHg ( 60 °C)


heat of vaporization: ~41.9 kJ/mol (dimer)





reaction suitability

core: aluminum


125-126 °C (lit.)
127 °C/760 mmHg
20 °C/8 mmHg
56 °C/50 mmHg


15 °C (lit.)


0.752 g/mL at 25 °C (lit.)

SMILES string




InChI key


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Descrição geral

Trimethylaluminum (TMA) is the most reactive and volatile among all organoaluminium compounds. It is extremely pyrophoric. It acts as a highly reactive reducing and alkylating agent.


TMA is used in a Ziegler Natta catalyst for polymerization and hydrogenation. TMA is mainly used for the production of methylaluminoxane, such as metalorganic chemical vapor deposition (MOCVD) of:
  • Al2O3 using TMA and O2 precursors.
  • Al4C3 layers have been grown on Al2O3 (0001) using TMA and methane as source materials for aluminum and carbon.


100 g in Sure-Pac™

Outras notas

Storage below 20°C may cause crystallization.

Produtos recomendados

Angled septum-inlet adapter Z118206 or straight septum-inlet adapter, 6mm I.D. inlet, Z118141 or straight septum-inlet adapter, 13mm I.D. inlet, Z118192 is recommended.



Palavra indicadora


Frases de perigo

Classificações de perigo

Pyr. Liq. 1 - Skin Corr. 1B - Water-react. 1

Perigos de suplementos

Código de classe de armazenamento

4.2 - Pyrophoric and self-heating hazardous materials



Ponto de fulgor (ºF)

No data available

Ponto de fulgor (ºC)

No data available

Equipamento de proteção individual

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

Certificado de análise

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Certificado de origem

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Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Oili ME, et al.
Thin Solid Films, 552, 124-135 (2014)
Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity
Liu X, et al.
Journal of Crystal Growth, 408, 78-84 (2014)
Photo-induced current and its degradation in Al4C3/Al2O3 (0001) grown by metalorganic chemical vapor deposition
Kim D, et al.
Thin Solid Films, 557, 216-221 (2014)
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