Todas as fotos(3)

261319

Sigma-Aldrich

Yttrium

ingot, 99.9% trace rare earth metals basis

Empirical Formula (Hill Notation):
Y
Número CAS:
Peso molecular:
88.91
Número EC:
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

100

teor

99.9% trace rare earth metals basis

forma

ingot

resistividade

57 μΩ-cm, 20°C

pb

3338 °C (lit.)

pf

1522 °C (lit.)

densidade

4.469 g/mL at 25 °C (lit.)

SMILES string

[Y]

InChI

1S/Y

InChI key

VWQVUPCCIRVNHF-UHFFFAOYSA-N

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Código de classe de armazenamento

13 - Non Combustible Solids

WGK

WGK 3

Ponto de fulgor (ºF)

Not applicable

Ponto de fulgor (ºC)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type N95 (US)

Certificado de análise

Certificado de origem

Yttrium-catalyzed addition of benzylic C-H bonds of alkyl pyridines to olefins.
Bing-Tao Guan et al.
Angewandte Chemie (International ed. in English), 52(16), 4418-4421 (2013-03-21)
Masahiko Ooe et al.
Aesthetic plastic surgery, 37(2), 424-433 (2013-02-12)
Skin wrinkles are one of the most cosmetically concerning signs of aging for women, and improvements in the visual effect of wrinkles become a matter of concern that has an impact on the quality of life. Although various wrinkle treatments
José Renato Queiroz et al.
The journal of adhesive dentistry, 15(2), 151-159 (2013-03-28)
To compare the effect of silica (Si)-based nano-coating deposited by reactive magnetron sputtering (RMP) with that of conventional surface conditioning using metal/zirconia primer alone or after air-particle abrasion on the adhesion of resin cements to zirconia ceramic. Two hundred forty
S Blanco-Canosa et al.
Physical review letters, 110(18), 187001-187001 (2013-05-21)
We use resonant x-ray scattering to determine the momentum-dependent charge correlations in YBa(2)Cu(3) O(6.55) samples with highly ordered chain arrays of oxygen acceptors (ortho-II structure). The results reveal nearly critical, biaxial charge density wave (CDW) correlations at in-plane wave vectors
Lin Wang et al.
Nanoscale, 5(3), 1116-1120 (2012-12-25)
We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to

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