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264067

Sigma-Aldrich

Indium

wire, diam. 0.5 mm, 99.995% trace metals basis

Sinônimo(s):
Indium element
Empirical Formula (Hill Notation):
In
Número CAS:
Peso molecular:
114.82
Número EC:
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

100

pressão de vapor

<0.01 mmHg ( 25 °C)

teor

99.995% trace metals basis

forma

wire

resistividade

8.37 μΩ-cm

diâmetro

0.5 mm

pf

156.6 °C (lit.)

densidade

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Categorias relacionadas

Embalagem

2.8, 14 g in poly spool

Quantidade

2.8 g = 2 m; 14 g = 10 m

Pictogramas

Health hazard

Palavra indicadora

Danger

Frases de perigo

Declarações de precaução

Hazard Classifications

STOT RE 1 Inhalation

Órgãos-alvo

Lungs

Storage Class Code

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK Alemanha

WGK 3

Ponto de fulgor (ºF)

Not applicable

Ponto de fulgor (ºC)

Not applicable

Equipamento de proteção individual

dust mask type N95 (US), Eyeshields, Gloves

Certificado de análise

Certificado de origem

Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD...
D Hermann et al.
Inorganic chemistry, 52(5), 2744-2749 (2013-02-16)
Several metal-organic framework compounds (MOF-5, MIL-68(Ga), MIL-68(In), MIL-53(Al)) were loaded with azobenzene (AZB), as confirmed by XRPD measurements and elemental analysis. By IR spectroscopy, it was shown that the light-induced trans/cis isomerization of AZB in these hybrid host-guest compounds is...
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are...
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer...

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