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264091

Sigma-Aldrich

Indium

rod, diam. 6 mm, ≥99.999% trace metals basis

Sinônimo(s):
Indium element
Empirical Formula (Hill Notation):
In
Número CAS:
Peso molecular:
114.82
Número EC:
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

100

pressão de vapor

<0.01 mmHg ( 25 °C)

teor

≥99.999% trace metals basis

forma

rod

resistividade

8.37 μΩ-cm

diâmetro

6 mm

pf

156.6 °C (lit.)

densidade

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Embalagem

20 g in poly tube

Quantidade

20 g = 100 mm

Storage Class Code

11 - Combustible Solids

WGK Alemanha

WGK 3

Ponto de fulgor (ºF)

Not applicable

Ponto de fulgor (ºC)

Not applicable

Equipamento de proteção individual

dust mask type N95 (US), Eyeshields, Gloves

Certificado de análise

Certificado de origem

G W Shu et al.
Physical chemistry chemical physics : PCCP, 15(10), 3618-3622 (2013-02-06)
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of...
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are...
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer...
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed...

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