Todas as fotos(2)

326615

Sigma-Aldrich

Indium

pieces, 99.99% trace metals basis

Empirical Formula (Hill Notation):
In
Número CAS:
Peso molecular:
114.82
Número EC:
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

100

pressão de vapor

<0.01 mmHg ( 25 °C)

teor

99.99% trace metals basis

forma

pieces

resistividade

8.37 μΩ-cm

tamanho aproximado da peça

1/4-2 in.

pf

156.6 °C (lit.)

densidade

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Categorias relacionadas

Pictogramas

Health hazard

Palavra indicadora

Danger

Frases de perigo

Declarações de precaução

Hazard Classifications

STOT RE 1 Inhalation

Órgãos-alvo

Lungs

Storage Class Code

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK Alemanha

WGK 3

Ponto de fulgor (ºF)

Not applicable

Ponto de fulgor (ºC)

Not applicable

Equipamento de proteção individual

dust mask type N95 (US), Eyeshields, Gloves

Certificado de análise

Certificado de origem

G W Shu et al.
Physical chemistry chemical physics : PCCP, 15(10), 3618-3622 (2013-02-06)
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of...
J S Fandiño et al.
Optics express, 21(3), 3726-3736 (2013-03-14)
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the...
Zi-Hui Zhang et al.
Optics express, 21(4), 4958-4969 (2013-03-14)
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched...
V M Katerynchuk et al.
Journal of nanoscience and nanotechnology, 12(11), 8856-8859 (2013-02-21)
The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the...
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer...

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