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647764

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Sinônimo(s):
Silicon element
Fórmula linear:
Si
Número CAS:
Peso molecular:
28.09
Número EC:
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

100

forma

crystalline (cubic (a = 5.4037))
wafer (single side polished)

contém

boron as dopant

diâmetro × espessura

3 in. × 0.5 mm

pb

2355 °C (lit.)

pf

1410 °C (lit.)

densidade

2.33 g/mL at 25 °C (lit.)

propriedades semicondutoras

<100>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Embalagem

1 ea in rigid mailer

propriedades físicas

Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm

Storage Class Code

13 - Non Combustible Solids

WGK Alemanha

WGK 2

Ponto de fulgor (ºF)

Not applicable

Ponto de fulgor (ºC)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type N95 (US)

Certificado de análise

Certificado de origem

Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image...
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on...
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW...
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology...
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen....

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Protocolos

Negative Photoresist Procedure

Our photoresist kit was designed to have the necessary chemical components for each step in the lithographic process. The component materials are provided in pre-weighed quantities for your convenience. Etchants are available separately so that the proper etchant can be chosen for a variety of substrate choices.

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