Merck
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647772

Sigma-Aldrich

Silicon

wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Sinônimo(s):
Silicon element
Fórmula linear:
Si
Número CAS:
Peso molecular:
28.09
Número MDL:
ID de substância PubChem:
NACRES:
NA.23

Nível de qualidade

100

forma

crystalline (cubic (a = 5.4037))
wafer (single side polished)

contém

boron as dopant

diâmetro × espessura

3 in. × 0.5 mm

pb

2355 °C (lit.)

pf

1410 °C (lit.)

densidade

2.33 g/mL at 25 °C (lit.)

propriedades semicondutoras

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Embalagem

5 ea in ampule

propriedades físicas

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Código de classe de armazenamento

13 - Non Combustible Solids

WGK

WGK 3

Ponto de fulgor (ºF)

Not applicable

Ponto de fulgor (ºC)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type N95 (US)

Certificado de análise

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Certificado de origem

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Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon

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Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.

Protocolos

Negative Photoresist Procedure

Our photoresist kit was designed to have the necessary chemical components for each step in the lithographic process. The component materials are provided in pre-weighed quantities for your convenience. Etchants are available separately so that the proper etchant can be chosen for a variety of substrate choices.

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