Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.

Optics express (2013-02-15)
Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G Van de Walle, James S Speck, Steven P DenBaars, Shuji Nakamura
RESUMO

Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k?p method for the above two planes. The theoretical calculations are consistent with the experimental results.

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