Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.

Journal of nanoscience and nanotechnology (2013-07-19)
Youngin Jeon, Jeongmin Kang, Myeongwon Lee, Taeho Moon, Sangsig Kim
RESUMO

Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on a single Si-NW array composed of five nanowires aligned in parallel and connected in series to form NOT-logic circuits. The excellent flexibility of the fabricated device was confirmed by bending-cycling tests. The voltage-transfer curve of the NOT-logic circuits showed an inverting operation with a logic swing of -92% and voltage gain of -2.5.

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Silicon, powder, −325 mesh, 99% trace metals basis
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Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, pieces, 99.95% trace metals basis
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Silicon, powder, −60 mesh, 99.998% trace metals basis
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Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
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Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm