Merck

Microstructures and electrochemical properties of Si-Ni-xTi alloys for anode materials.

Journal of nanoscience and nanotechnology (2013-07-19)
Jong Jin Song, Hye Jin Kwon, Deuk Kyu Ahn, Yeon Yi Chu, Jong Soo Cho, Jeong Tak Moon, Won-Wook Park, Keun Yong Sohn
PMID23858869
RESUMO

The phase change due to varying content of titanium in Si-Ni-xTi alloys and its effect on the electrochemical behavior has been investigated. Specimens were prepared by melt-spinning to reduce the microstructure scale. Results showed that silicon particles of 50-100 nm diameter and dendrites of somewhat larger scale were formed in the Si-Ni-Ti alloys ribbons. The microstructure of Si70Ni15Ti15 alloy ribbons was composed of silicon particles finely dispersed in Si7Ni4Ti4 phase. The cycle performance was improved by the formation of TiSi2 or NiSi2 phase at the presence of Si7Ni4Ti4 phase, either of which combined with Si7Ni4Ti4 phase effectively accommodated the volume change of silicon particles during cycling. The reduced scale of silicon particles contributed to the enhanced cycle efficiency as well.

MATERIAIS
Número do produto
Marca
Descrição do produto
357626
Sigma-Aldrich
Nickel, wire, diam. 0.5 mm, ≥99.9% trace metals basis
357588
Sigma-Aldrich
Nickel, foil, thickness 0.1 mm, 99.98% trace metals basis
357553
Sigma-Aldrich
Nickel, foil, thickness 0.5 mm, 99.98% trace metals basis
267074
Sigma-Aldrich
Nickel, rod, diam. 6.35 mm, ≥99.99% trace metals basis
266981
Sigma-Aldrich
Nickel, powder, <50 μm, 99.7% trace metals basis
577995
Sigma-Aldrich
Nickel, nanopowder, <100 nm avg. part. size, ≥99% trace metals basis
203904
Sigma-Aldrich
Nickel, powder, <150 μm, 99.99% trace metals basis
267007
Sigma-Aldrich
Nickel, foil, thickness 0.25 mm, 99.995% trace metals basis
267058
Sigma-Aldrich
Nickel, wire, diam. 0.5 mm, ≥99.99% trace metals basis
268283
Sigma-Aldrich
Nickel, powder, <1 μm, 99.8% trace metals basis
268259
Sigma-Aldrich
Nickel, foil, thickness 0.125 mm, ≥99.9%
343250
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
357634
Sigma-Aldrich
Nickel, wire, diam. 0.25 mm, ≥99.9%
215619
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
267414
Sigma-Aldrich
Silicon, powder, −60 mesh, 99.998% trace metals basis
510033
Sigma-Aldrich
Raney®-Nickel, W.R. Grace and Co. Raney® 2400, slurry, in H2O, active catalyst
221678
Sigma-Aldrich
Raney®-Nickel, W.R. Grace and Co. Raney® 2800, slurry, in H2O, active catalyst
647101
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
646687
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
647705
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
647535
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
633097
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
767492
Sigma-Aldrich
Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
767484
Sigma-Aldrich
Nickel, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.95% trace metals basis
647780
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
647799
Sigma-Aldrich
Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
647675
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
647772
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
647543
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
647764
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm