Merck
  • Início
  • Resultados da busca
  • Direct patterning of free standing three dimensional silicon nanofibrous network to facilitate multi-dimensional growth of fibroblasts and osteoblasts.

Direct patterning of free standing three dimensional silicon nanofibrous network to facilitate multi-dimensional growth of fibroblasts and osteoblasts.

Journal of biomedical nanotechnology (2013-09-26)
Priyatha Premnath, Bo Tan, Krishnan Venkatakrishnan
RESUMO

The advent of tissue engineering has invigorated interest in novel tissue regeneration matrices. An ideal matrix that simulates the natural extra cellular matrix (ECM) should be nanoscale, with three dimensionally interconnected nanofibers which cannot be generated by current methods such as electrospinning. Furthermore, certain biocompatible materials like silicon cannot be electrospun. We present a novel MHz laser synthesis method that permits sub-100 nm scale structures on any material, including silicon, that mimic the natural ECM. Owing to its three dimensional interlinked nature, the nanofibrous substrate is shown to guide the osteoblasts and fibroblasts to grow not only planarly to the surface, as is true for conventional scaffolds, but also expand and grow upward vertically. This method of synthesis demonstrates promise for novel three dimensional (3D) scaffolds that can assist in tissue and bone regeneration and a myriad of other applications such as drug delivery and biosensing.

MATERIAIS
Número do produto
Marca
Descrição do produto

Sigma-Aldrich
Silicon, powder, −60 mesh, 99.998% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis