Merck
  • Home
  • Search Results
  • Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals: a model for localized surface plasmon resonance.

Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals: a model for localized surface plasmon resonance.

Physical review letters (2013-11-12)
Xiaodong Pi, Christophe Delerue
ABSTRACT

We present tight-binding calculations in the random-phase approximation of the optical response of Silicon nanocrystals (Si NCs) ideally doped with large concentrations of phosphorus (P) atoms. A collective response of P-induced electrons is demonstrated, leading to localized surface plasmon resonance (LSPR) when a Si NC contains more than ≈10 P atoms. The LSPR energy varies not only with doping concentration but also with NC size due to size-dependent screening by valence electrons. The simple Drude-like behavior is recovered for NC size above 4 nm. Si NCs containing a large number of deep defects in place of hydrogenic impurities do not give rise to LSPR.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Phosphorus, red, ≥97.0%
Sigma-Aldrich
Silicon, powder, −60 mesh, 99.998% trace metals basis
Sigma-Aldrich
Phosphorus, red, ≥99.99% trace metals basis
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis