Merck
  • Início
  • Resultados da busca
  • (28)silicon radiation impairs neuronal output in CA1 neurons of mouse ventral hippocampus without altering dendritic excitability.

(28)silicon radiation impairs neuronal output in CA1 neurons of mouse ventral hippocampus without altering dendritic excitability.

Radiation research (2014-03-15)
Emil Rudobeck, Gregory A Nelson, Irina V Sokolova, Roman Vlkolinský
RESUMO

An unavoidable complication of space travel is exposure to radiation consisting of high-energy charged particles (HZE), such as Fe and Si nuclei. HZE radiation can affect neuronal functions at the level of the synapse or neuronal soma without inducing significant neuronal death. Different radiation species impart distinct patterns of radiation damage depending on their track structure, dose rate and fluence. Moreover, structural differences exist along the dorsoventral axis of the hippocampus that may underlie different radiosensitivities within the same neuronal field (e.g., the CA1 pyramidal cell population of the hippocampus). In this study we tested the functional effects of low doses of (28)Si radiation on excitability and synaptic plasticity in hippocampal slices prepared strictly from the ventral hippocampus. We used extracellular electrophysiological techniques to record field excitatory postsynaptic potentials (EPSPs) and population spikes in hippocampal CA1 neurons from C57BL/6J male mice 3 months after exposure to (28)Si radiation (600 MeV/n; 0.25 and 1 Gy, whole body). In irradiated mice we found prominent decrements in population spike amplitudes and reduced maximal neuronal output without changes in dendritic field EPSP. Reduced field EPSP vs. population spike ratios indicate radiation-induced impairment of the EPSP-spike (E-S) coupling. This effect was not associated with significant changes in the magnitude of short- and long-term synaptic plasticity [long-term potentiation (LTP)]. These data confirm that irradiation with (28)Si particles at relatively low doses alters the properties of the hippocampal network, which can limit its connectivity with other brain centers.

MATERIAIS
Número do produto
Marca
Descrição do produto

Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, powder, −60 mesh, 99.998% trace metals basis
Silicon, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, sphere, 10pcs, diameter 2.0mm, precision sphere grade 25
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -100, 100%
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
Silicon, rod, 50mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 100mm, diameter 5.0mm, crystalline, 100%
Silicon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, rod, 100mm, diameter 25mm, crystalline, 100%
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -111, 100%
Silicon, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%