Merck

Surface chemistry of porous silicon and implications for drug encapsulation and delivery applications.

Advances in colloid and interface science (2012-04-24)
Karyn L Jarvis, Timothy J Barnes, Clive A Prestidge
RESUMO

Porous silicon (pSi) has a number of unique properties that appoint it as a potential drug delivery vehicle; high loading capacity, controllable surface chemistry and structure, and controlled release properties. The native Si(y)SiH(x) terminated pSi surface is highly reactive and prone to spontaneous oxidation. Surface modification is used to stabilize the pSi surface but also to produce surfaces with desired drug delivery behavior, typically via oxidation, hydrosilylation or thermal carbonization. A number of advanced characterization techniques have been used to analyze pSi surface chemistry, including X-ray photoelectron spectroscopy and time of flight secondary ion mass spectrometry. Surface modification not only stabilizes the pSi surface but determines its charge, wettability and dissolution properties. Manipulation of these parameters can impact drug encapsulation by altering drug-pSi interactions. pSi has shown to be a successful vehicle for the delivery of poorly soluble drugs and protein therapeutics. Surface modification influences drug pore penetration, crystallinity, loading level and dissolution rate. Surface modification of pSi shows great potential for drug delivery applications by controlling pSi-drug interactions. Controlling these interactions allows specific drug release behaviors to be engineered to aid in the delivery of previously challenging therapeutics. Within this review, different pSi modification techniques will be outlined followed by a summary of how pSi surface modification has been used to improve drug encapsulation and delivery.

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Sigma-Aldrich
Silicon, powder, −60 mesh, 99.998% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Silicon, sphere, 20pcs, diameter 2.0mm, precision sphere grade 25
Silicon, rod, 50mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, single crystal, -111, n-type, phosphorus doped, diameter 76.2mm, length 0.75mm, 100%
Silicon, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
Silicon, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
Silicon, sphere, 50pcs, diameter 2.0mm, precision sphere grade 25
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
Silicon, rod, 50mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 100mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, sphere, 10pcs, diameter 2.0mm, precision sphere grade 25
Silicon, sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
Silicon, rod, 25mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, rod, 10mm, diameter 2.0mm, crystalline, 100%
Silicon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, rod, 100mm, diameter 25mm, crystalline, 100%
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -111, 100%
Silicon, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%