Merck

Silicon nanotweezers for biomechanical and bioelectrical assays.

Frontiers in bioscience (Elite edition) (2013-06-12)
Dominique Collard
RESUMO

In modern life, technologies enabling detection of biological molecules at a low threshold, for health and ecological concerns, are in high demand. Directly interrogating the molecules is a promising direction to clarify the noisy response of conventional assays arising from simultaneous different reactions. Besides sophisticated biophysical instrument such as the atomic force microscope, this paper proposes silicon nanotweezers (SNT) as a new microsystem for molecular manipulation. SNT can trap molecules and sense their biomechanical and bioelectrical response in minute operations. In this review SNT characteristics are overviewed; their operation modes are illustrated by molecule and cell trapping, manipulation and characterization in air and in solution. As they are tiny and can be mass produced by highly parallel microsystem technology, SNT can be seen as a potential molecular and cellular probe for routine analysis and bio detection.

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Silicon, pieces, 99.95% trace metals basis
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Silicon, powder, −325 mesh, 99% trace metals basis
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Silicon, powder, −60 mesh, 99.998% trace metals basis
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Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
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Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
Silicon, rod, 100mm, diameter 2.0mm, crystalline, 100%
Silicon, single crystal, -100, n-type, phosphorus doped, diameter 150mm, length 0.65mm, 100%
Silicon, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
Silicon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Silicon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%
Silicon, rod, 10mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -100, 100%
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%