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Silicon nanowire biologically sensitive field effect transistors: electrical characteristics and applications.

Journal of nanoscience and nanotechnology (2014-04-16)
Taiuk Rim, Chang-Ki Baek, Kihyun Kim, Yoon-Ha Jeong, Jeong-Soo Lee, M Meyyappan
RESUMO

The interest in biologically sensitive field effect transistors (BioFETs) is growing explosively due to their potential as biosensors in biomedical, environmental monitoring and security applications. Recently, adoption of silicon nanowires in BioFETs has enabled enhancement of sensitivity, device miniaturization, decreasing power consumption and emerging applications such as the 3D cell probe. In this review, we describe the device physics and operation of the silicon nanowire BioFETs along with recent advances in the field. The silicon nanowire BioFETs are basically the same as the conventional field-effect transistors (FETs) with the exceptions of nanowire channel instead of thin film and a liquid gate instead of the conventional gate. Therefore, the silicon device physics is important to understand the operation of the BioFETs. Herein, physical characteristics of the silicon nanowire FETs are described and the operational principles of the BioFETs are classified according to the number of gates and the analysis domain of the measured signal. Even the bottom-up process has merits on low-cost fabrication; the top-down process technique is highlighted here due to its reliability and reproducibility. Finally, recent advances in the silicon nanowire BioFETs in the literature are described and key features for commercialization are discussed.

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Silicon, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%
Silicon, rod, 50mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, rod, 10mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
Silicon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, single crystal, -111, n-type, phosphorus doped, diameter 76.2mm, length 0.75mm, 100%
Silicon, sphere, 50pcs, diameter 2.0mm, precision sphere grade 25
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, rod, 100mm, diameter 5.0mm, crystalline, 100%
Silicon, rod, 100mm, diameter 2.0mm, crystalline, 100%
Sigma-Aldrich
Silicon, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -111, 100%
Silicon, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -100, 100%
Silicon, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
Silicon, rod, 100mm, diameter 25mm, crystalline, 100%
Silicon, disks, 13mm, thickness 0.38mm, single crystal, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%
Silicon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, sphere, 10pcs, diameter 2.0mm, precision sphere grade 25
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%