Merck

264032

Sigma-Aldrich

powder, −100 mesh, 99.99% trace metals basis

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别名:
Indium element
Empirical Formula (Hill Notation):
In
CAS号:
分子量:
114.82
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

蒸汽压

<0.01 mmHg ( 25 °C)

质量水平

检测方案

99.99% trace metals basis

形式

powder

电阻率

8.37 μΩ-cm

粒径

−100 mesh

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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1 of 4

此商品
264059357286264040
Indium powder, &#8722;100&#160;mesh, 99.99% trace metals basis

Sigma-Aldrich

264032

Indium foil, thickness 0.127&#160;mm, 99.99% trace metals basis

Sigma-Aldrich

264059

Indium foil, thickness 0.5&#160;mm, 99.99% trace metals basis

Sigma-Aldrich

357286

Indium foil, thickness 0.25&#160;mm, 99.995% trace metals basis

Sigma-Aldrich

264040

form

powder

form

foil

form

foil

form

foil

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

象形图

FlameExclamation mark

警示用语:

Danger

危险分类

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

靶器官

Respiratory system

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

个人防护装备

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


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T1503
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25G
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1000309185

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A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a

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