Merck

326615

Sigma-Aldrich

pieces, 99.99% trace metals basis

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Empirical Formula (Hill Notation):
In
CAS号:
分子量:
114.82
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

蒸汽压

<0.01 mmHg ( 25 °C)

检测方案

99.99% trace metals basis

形式

pieces

电阻率

8.37 μΩ-cm

近似片尺寸

1/4-2 in.

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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1 of 4

此商品
326607264113264032
Indium pieces, 99.99% trace metals basis

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326615

Indium beads, diam. 2-5&#160;mm, &#8805;99.9% trace metals basis

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326607

Indium beads, diam. 2-5&#160;mm, 99.999% trace metals basis

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264113

Indium powder, &#8722;100&#160;mesh, 99.99% trace metals basis

Sigma-Aldrich

264032

form

pieces

form

beads

form

beads

form

powder

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

象形图

Health hazard

警示用语:

Danger

危险声明

危险分类

STOT RE 1 Inhalation

靶器官

Lungs

储存分类代码

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves


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T1503
货号
-
25G
包装规格/数量

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1000309185

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烯丙基溴

Dawei Deng et al.
Physical chemistry chemical physics : PCCP, 15(14), 5078-5083 (2013-03-02)
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
G W Shu et al.
Optics express, 21 Suppl 1, A123-A130 (2013-02-15)
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating

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