Merck

357065

Sigma-Aldrich

wire, diam. 2.0 mm, 99.995% trace metals basis

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别名:
Indium element
Empirical Formula (Hill Notation):
In
CAS号:
分子量:
114.82
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

蒸汽压

<0.01 mmHg ( 25 °C)

检测方案

99.995% trace metals basis

形式

wire

电阻率

8.37 μΩ-cm

直径

2.0 mm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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此商品
264067264075357278
Indium wire, diam. 2.0&#160;mm, 99.995% trace metals basis

Sigma-Aldrich

357065

Indium wire, diam. 0.5&#160;mm, 99.995% trace metals basis

Sigma-Aldrich

264067

Indium wire, diam. 1.0&#160;mm, 99.99% trace metals basis

Sigma-Aldrich

264075

Indium foil, thickness 1.0&#160;mm, 99.999% trace metals basis

Sigma-Aldrich

357278

form

wire

form

wire

form

wire

form

foil

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

数量

4.5g = 20cm;22.5g = 100cm

替代产品

产品编号
说明
价格

象形图

Health hazard

警示用语:

Danger

危险声明

危险分类

STOT RE 1 Inhalation

靶器官

Lungs

储存分类代码

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves


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Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
G W Shu et al.
Optics express, 21 Suppl 1, A123-A130 (2013-02-15)
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that

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