所有图片(1)

483575

Sigma-Aldrich

金刚石

monocrystalline powder, ~1 μm

Empirical Formula (Hill Notation):
C
CAS号:
分子量:
12.01
EC 号:
MDL编号:

形式

monocrystalline powder

质量水平

100

粒径

~1 μm

密度

3.5 g/mL at 25 °C (lit.)

特色行业

Battery Manufacturing

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一般描述

Mono- and polycrystalline diamond can be prepared by high pressure high temperature (HPHT) and chemical vapor deposition (CVD).

应用

Monocrystalline diamond paste based electrodes may be used as electrochemical sensors for the determination of Fe (II) in pharmaceutical products.

包装

1 g in glass bottle

Storage Class Code

13 - Non Combustible Solids

WGK Germany

nwg

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

分析证书

原产地证书 (CofO)

Monocrystalline Diamond Paste-Based Electrodes and Their Applications for the Determination of Fe(II) in Vitamin
Stefan RI and Bairu SG
Analytical Chemistry, 75(20), 5394-5398 (2003)
Microwave plasma deposition and mechanical treatment of single crystals and polycrystalline diamond films
Ashkihazi EE, et al.
Inorganic Materials, 5(3), 230-236 (2014)
M K Atumi et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065802-065802 (2013-01-15)
Diamond has many extreme physical properties and it can be used in a wide range of applications. In particular it is a highly effective particle detection material, where radiation damage is an important consideration. The WAR9 and WAR10 are electron...
Gill Nelson
Global health action, 6, 19520-19520 (2013-02-01)
Crystalline silica and asbestos are common minerals that occur throughout South Africa, exposure to either causes respiratory disease. Most studies on silicosis in South Africa have been cross-sectional and long-term trends have not been reported. Although much research has been...
Pontus Forsberg et al.
Optics express, 21(3), 2693-2700 (2013-03-14)
Control of the sidewall angle of diamond microstructures was achieved by varying the gas mixture, bias power and mask shape during inductively coupled plasma etching. Different etch mechanisms were responsible for the angle of the lower and upper part of...

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