推荐产品
蒸汽壓力
<0.01 mmHg ( 25 °C)
品質等級
化驗
99.95%
形狀
bars
電阻係數
8.37 μΩ-cm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES 字串
[In]
InChI
1S/In
InChI 密鑰
APFVFJFRJDLVQX-UHFFFAOYSA-N
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訊號詞
Danger
危險聲明
危險分類
STOT RE 1 Inhalation
標靶器官
Lungs
儲存類別代碼
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
水污染物質分類（WGK）
WGK 1
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
其他客户在看
Highly luminescent water-soluble quaternary Zn-Ag-In-S quantum dots for tumor cell-targeted imaging.
Dawei Deng et al.
Physical chemistry chemical physics : PCCP, 15(14), 5078-5083 (2013-03-02)
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
J S Fandiño et al.
Optics express, 21(3), 3726-3736 (2013-03-14)
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
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