920126

Sigma-Aldrich

R2R Monolayer large grain CVD graphene on silicon wafer

new

4 in diameter

别名:
Roll-to-Roll graphene
Empirical Formula (Hill Notation):
C
CAS号:
分子量:
12.01

质量水平

100,

描述

Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5

薄层电阻

280 Ω/sq ±10%

尺寸

110 μm × 110 μm ± 10% , grain size

表面覆盖度

surface coverage >98%

透射比

>97%

半导体性质

(mobility>3000 cm2/V·s) (Hall effect measurements)

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一般描述

Roll-to-roll, high-quality, monolayer CVD graphene with large grain size (∼110μm2) on 4 inch silicon wafer.

应用

Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.
The roll-to-roll process allows continuous, large scale graphene production.
This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET, CVD graphene based sensors, and heterostructure based micro/nano electronics.

Application examples:
  • Ultrafast Transistor
  • Optical devices
  • Bio/Gas Sensor
  • Transparent Electrode
  • Flexible Display
  • Smart Coating
  • Thermal management

注意

Be cautious not to drop
Keep away from contamination, heat, dust and flame etc.

储存及稳定性

Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.

法律信息

Product of LG Electronics, R&D use only

WGK Germany

WGK 3

分析证书

原产地证书 (CofO)

Integrating graphene into semiconductor fabrication lines.
Daniel Neumaier et al.
Nature materials, 18(6), 525-529 (2019-05-23)
Hao-Ling Tang et al.
ACS nano, 11(12), 12817-12823 (2017-11-29)
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness...
Bing Deng et al.
Advanced materials (Deerfield Beach, Fla.), 31(9), e1800996-e1800996 (2018-10-03)
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain...

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