GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.

Optics express (2012-12-25)
A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, B Vincent, G Roelkens
摘要

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.

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