Graphene field effect transistor without an energy gap.

Proceedings of the National Academy of Sciences of the United States of America (2013-05-15)
Min Seok Jang, Hyungjun Kim, Young-Woo Son, Harry A Atwater, William A Goddard

Graphene is a room temperature ballistic electron conductor and also a very good thermal conductor. Thus, it has been regarded as an ideal material for postsilicon electronic applications. A major complication is that the relativistic massless electrons in pristine graphene exhibit unimpeded Klein tunneling penetration through gate potential barriers. Thus, previous efforts to realize a field effect transistor for logic applications have assumed that introduction of a band gap in graphene is a prerequisite. Unfortunately, extrinsic treatments designed to open a band gap seriously degrade device quality, yielding very low mobility and uncontrolled on/off current ratios. To solve this dilemma, we propose a gating mechanism that leads to a hundredfold enhancement in on/off transmittance ratio for normally incident electrons without any band gap engineering. Thus, our saw-shaped geometry gate potential (in place of the conventional bar-shaped geometry) leads to switching to an off state while retaining the ultrahigh electron mobility in the on state. In particular, we report that an on/off transmittance ratio of 130 is achievable for a sawtooth gate with a gate length of 80 nm. Our switching mechanism demonstrates that intrinsic graphene can be used in designing logic devices without serious alteration of the conventional field effect transistor architecture. This suggests a new variable for the optimization of the graphene-based device--geometry of the gate electrode.

Product Number
Product Description

石墨, powder, <20 μm, synthetic
石墨, flakes
石墨, powder, <45 μm, ≥99.99% trace metals basis
石墨, rod, L 150 mm, diam. 3 mm, low density, 99.995% trace metals basis
石墨, powder, <150 μm, 99.99% trace metals basis
石墨, rod, L 150 mm, diam. 6 mm, 99.995% trace metals basis