Augustinus Stijn M Goossens et al.
Nano letters, 12(9), 4656-4660 (2012-08-22)
We report on the fabrication and measurement of nanoscale devices that permit electrostatic confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched between hexagonal boron nitride bottom and top gate dielectrics. Top gates are patterned such that...
Min Gao et al.
The Journal of chemical physics, 138(3), 034701-034701 (2013-01-25)
The mechanism of CO oxidation by O(2) on Au atoms supported on the pristine and defected hexagonal boron nitride (h-BN) surface has been studied theoretically using density functional theory. It is found that O(2) binds stronger than CO on an...
Riccardo Messina et al.
Scientific reports, 3, 1383-1383 (2013-03-12)
Thermophotovoltaic devices are energy-conversion systems generating an electric current from the thermal photons radiated by a hot body. While their efficiency is limited in far field by the Schockley-Queisser limit, in near field the heat flux transferred to a photovoltaic...
A solid-state process for formation of boron nitride nanotubes
Chen Y, et al.
Applied Physics Letters, 74(20) (1999)
Boron carbide and nitride as reactants for in situ synthesis of boride-containing ceramic composites
Zhanga GJ, et al.
J. Eur. Ceram. Soc., 24, 171-178 (2004)