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Merck

463043

Disilane

electronic grade

Synonym(s):

Disilicane, Disilicoethane, Disilicon hexahydride, Silicoethane, Silicon hydride (Si2 H6 )

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20 G

MXP 43,992.00

MXP 43,992.00

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About This Item

Linear Formula:
Si2H6
CAS Number:
1590-87-0
Molecular Weight:
62.22
EC Number:
216-466-5
MDL number:
MFCD00054678
UNSPSC Code:
12352103
PubChem Substance ID:
24869889
NACRES:
NA.23

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grade

electronic grade

Quality Level

100

Assay

≥99.998% chemical purity basis

form

gas

impurities

≤50 ppm Higher silanes
<0.2 ppm Chlorosilanes
<1 ppm Argon (Ar) + Oxygen (O2)
<1 ppm Carbon dioxide (CO2)
<1 ppm Nitrogen (N2)
<1 ppm THC
<1 ppm Water
<5 ppm Siloxanes

bp

−14.5 °C (lit.)

mp

−132.6 °C (lit.)

transition temp

critical temperature 150.9 °C

SMILES string

[SiH3][SiH3]

InChI

1S/H6Si2/c1-2/h1-2H3

InChI key

PZPGRFITIJYNEJ-UHFFFAOYSA-N

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Disilane electronic grade

Sigma-Aldrich

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Sigma-Aldrich

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Tetramethylsilane electronic grade, &#8805;99.99% trace metals basis

Sigma-Aldrich

523771

Tetramethylsilane

(3-Aminopropyl)triethoxysilane packaged for use in deposition systems, &#8805;98%

Sigma-Aldrich

706493

(3-Aminopropyl)triethoxysilane

assay

≥99.998% chemical purity basis

assay

99.998% trace metals basis

assay

≥99.99% trace metals basis

assay

≥98%

grade

electronic grade

grade

-

grade

electronic grade

grade

-

form

gas

form

liquid

form

liquid

form

liquid

mp

−132.6 °C (lit.)

mp

−70 °C (lit.)

mp

−99 °C (lit.)

mp

-

impurities

≤50 ppm Higher silanes, <1 ppm Argon (Ar) + Oxygen (O2), <1 ppm Nitrogen (N2), <1 ppm Water, <0.2 ppm Chlorosilanes, <1 ppm THC, <1 ppm Carbon dioxide (CO2)

impurities

-

impurities

-

impurities

-

bp

−14.5 °C (lit.)

bp

57.6 °C (lit.)

bp

26-28 °C (lit.)

bp

217 °C/760 mmHg (lit.)

General description

Atomic number of base material: 14 Silicon

Application

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.[1]

Features and Benefits

Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Signal Word

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

2A - Gases

WGK

WGK 3

Flash Point(F)

<50.0 °F - closed cup

Flash Point(C)

< 10 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKCR8214
MKCR8213
MKCR8211
MKCR8215
MKCR8212

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