647101
Silicon
wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Synonym(s):
Silicon element
Select a Size
About This Item
form
crystalline (cubic (a = 5.4037))
wafer (single side polished)
Quality Level
does not contain
dopant
diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<111>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Related Categories
1 of 4
This Item | 647543 | 647535 | 647802 |
---|---|---|---|
form crystalline (cubic (a = 5.4037)), wafer (single side polished) | form crystalline (cubic (a = 5.4037)), wafer (single side polished) | form crystalline (cubic (a = 5.4037)), wafer (single side polished) | form crystalline (cubic (a = 5.4037)), wafer (single side polished) |
density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
Quality Level 100 | Quality Level 100 | Quality Level 100 | Quality Level 100 |
mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1240 °C, 1410 °C (lit.) |
bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
does not contain dopant | does not contain dopant | does not contain dopant | does not contain - |
Application
- Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).
- Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).
Physical properties
Storage Class Code
13 - Non Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
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