Merck

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.

Optics express (2012-12-25)
A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, B Vincent, G Roelkens
ABSTRACT

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Tin, foil, thickness 0.5 mm, 99.998% trace metals basis
Sigma-Aldrich
Germanium, chips, 99.999% trace metals basis
Sigma-Aldrich
Tin, 99.8%, shot, 3 mm
Sigma-Aldrich
Germanium, powder, −100 mesh, ≥99.999% trace metals basis
Sigma-Aldrich
Germanium, powder, −100 mesh, ≥99.99% trace metals basis
Sigma-Aldrich
Tin, powder, <45 μm particle size, 99.8% trace metals basis
Sigma-Aldrich
Germanium, chips, 99.999% trace metals basis
Sigma-Aldrich
Tin, wire, diam. 0.5 mm, 99.999% trace metals basis
Sigma-Aldrich
Tin, shot, 99.999% trace metals basis
Sigma-Aldrich
Tin, foil, thickness 0.127 mm, 99.9%
Sigma-Aldrich
Tin, powder, <150 μm, 99.5% trace metals basis
Sigma-Aldrich
Tin, ≥99%, powder
Sigma-Aldrich
Tin, granular, 0.425-2.0 mm particle size, ≥99.5%, ACS reagent
Supelco
Tin (impurities), manufactured by MBH Analytical Ltd (71X SR0)
Sigma-Aldrich
Tin, powder, 10 μm, 99% trace metals basis
Sigma-Aldrich
Tin, nanopowder, <150 nm particle size (SEM), ≥99% trace metals basis
Sigma-Aldrich
Tin, powder, -100 mesh, 99.99% trace metals basis