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Substrates & Prefab Electronic Components

Scientist wearing protective clothing inspecting prefabricated pre-patterned electronic device substrate

Our substrates and prefabricated electronic components aim to greatly reduce your processing time for either characterizing your newly developed semiconductor materials or constructing an effective FET-based sensor to detect chemical/biological analytes. Just add your choice of a semiconducting layer.

Quickly build your field-effect transistors (FETs) with our series of pre-patterned, back-gated, interdigitated electrodes. These electrodes are prefabricated on conducting silicon wafers, using standard lift-off technology and feature reliable ohmic source/drain contacts, very large channel width-to-length ratio (500 to 4000), and a variety of dielectric thicknesses and device architectures to choose from.
Our back-gated Lateral organic field-effect transistors (LOFET) circuits further simplify your active material characterization by requiring frequency measurement of only the ring oscillators, thereby avoiding the time-consuming measurement and analysis of individual transistors.

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Product Number

Product Description

Pricing

735167

Fluorine doped tin oxide coated glass slide, L × W × thickness 300 mm × 300 mm × 2.2 mm, surface resistivity ~7 Ω/sq

BASMF2056

Ag/AgCl (3M KCl) Reference Electrode

703192

Indium tin oxide coated glass slide, square, surface resistivity 8-12 Ω/sq

639303

Indium tin oxide coated PET, surface resistivity 60 Ω/sq, L × W × thickness 1 ft × 1 ft × 5 mil, sheet

BASMW1032

Platinum Wire Auxiliary Electrode

BASMF2052

Ag/AgCl (3M NaCl) Reference Electrode

735140

Fluorine doped tin oxide coated glass slide, L × W × thickness 50 mm × 50 mm × 2.2 mm, surface resistivity ~7 Ω/sq

735159

Fluorine doped tin oxide coated glass slide, L × W × thickness 100 mm × 100 mm × 2.3 mm, surface resistivity ~7 Ω/sq

BASMF2012

Glassy Carbon Voltammetry Electrode

703176

Indium tin oxide coated glass slide, square, surface resistivity 70-100 Ω/sq

AFM-71855-15-10

Muscovite Mica for AFM, (V-1 Quality), size 15 mm × 15 mm, pack of 10

646687

Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

BASMF2060

Electrode Polishing Kit, PK-4

578274

Indium tin oxide coated glass slide, rectangular, surface resistivity 8-12 Ω/sq, slide

647764

Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

643262

Gold coated silicon wafer, 99.999% (Au), layer thickness 1000 Å, 99.99% (Ti)

576352

Indium tin oxide coated glass slide, rectangular, surface resistivity 70-100 Ω/sq, slide

647101

Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

703184

Indium tin oxide coated glass slide, square, surface resistivity 30-60 Ω/sq, slide

929883

Platinum (Pt) Mesh Electrode, size 2.0 cm × 2.0 cm, 0.1 mm wire diameter, 99.9%

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Test your final devices via our Miniprober, which allows for fast and easy device measurement with reliable pad contact, without the need of a probe station.
We also offer prefabricated graphene chips in the configuration of hall bar device, 2-probe FETs, or liquid-gated 2-probe FETs, to fast-track your graphene sensor research and applications.
For your nanodevice and nanomaterial characterization needs, select our TEM grids and supplies in various grid materials, mesh sizes, grid configurations, coating material and coating thickness, staining chemicals, and sample preparation tools.
Our broad selection of electrochemical components features a variety of aqueous and non-aqueous reference electrodes with easy-to-handle form factors, as well as working, counter and auxiliary electrodes.

Related Product Literature

Brochure: User protocol for graphene FET GRFETS10
Brochure: User protocol for graphene FET GRFETS20
Article: Tutorial in Microelectronics and Nanoelectronics

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