所有图片(4)

硅

powder, −325 mesh, 99% trace metals basis

所有图片(4)

线性分子式:

CAS号:

7440-21-3

分子量:

28.09

EC 号:

231-130-8

MDL编号:

MFCD00085311

PubChem化学物质编号:

24852908

NACRES:

NA.23

质量水平

100

测定

99% trace metals basis

形式

powder

粒径

−325 mesh

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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象形图

GHS02

警示用语：

Warning

危险声明

H228

预防措施声明

P210 - P240 - P241 - P280 - P370 + P378

危险分类

Flam. Sol. 2

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

分析证书

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原产地证书 (CofO)

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Quotes and Ordering

Bulk Quote-Order Product

Numerical simulation and fabrication of silicon sheet via spin casting.

Jaewoo Lee et al.

Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)

A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of

Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

Seungil Park et al.

Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)

We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.

Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.

Jae Cheol Shin et al.

Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)

We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW

Preparation of mesoporous Si-C-O fibers with a narrow mesopore size distribution.

Chengyong Li et al.

Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)

Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.

Simple fabrication of antireflective silicon subwavelength structure with self-cleaning properties.

Bo-Soon Kim et al.

Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)

A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal

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