Merck
所有图片(1)

264059

Sigma-Aldrich

foil, thickness 0.127 mm, 99.99% trace metals basis

别名:
Indium element
Empirical Formula (Hill Notation):
In
CAS号:
分子量:
114.82
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

质量水平

100

蒸汽压

<0.01 mmHg ( 25 °C)

测定

99.99% trace metals basis

形式

foil

电阻率

8.37 μΩ-cm

厚度

0.127 mm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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应用

Indium foil is thermal interface material with high conductance that is used in cryogenics. It can also be used as indium vapor source for the preparation of indium nitride nanowires on a silicon substrate. It may also be used in the time of flight secondary ion mass spectroscopy (ToF-SIMS) for the analysis of powder samples.

包装

2.3, 9.2 g in rigid mailer

数量

2.3g = 50×50mm;9.2g = 100×100mm

象形图

Health hazard

警示用语:

Danger

危险声明

危险分类

STOT RE 1 Inhalation

靶器官

Lungs

储存分类代码

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves

分析证书

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原产地证书 (CofO)

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更多文件

Quotes and Ordering

Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne

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