Merck
所有图片(3)

277959

Sigma-Aldrich

powder, 99.99% trace metals basis

Empirical Formula (Hill Notation):
In
CAS号:
分子量:
114.82
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

蒸汽压

<0.01 mmHg ( 25 °C)

测定

99.99% trace metals basis

形式

powder

电阻率

8.37 μΩ-cm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

Inchi Key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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象形图

FlameExclamation mark

警示用语:

Danger

危险分类

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

靶器官

Respiratory system

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

Eyeshields, Gloves, type P1 (EN143) respirator filter, type P3 (EN 143) respirator cartridges

分析证书

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原产地证书 (CofO)

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更多文件

Quotes and Ordering

Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are

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