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铟 wire, diam. 0.25 mm, 99.999% trace metals basis; CAS Number: 7440-74-6; EC Number: 231-180-0; find Sigma-Aldrich-326623 MSDS, related peer-reviewed papers, technical documents, similar products & more at Sigma-Aldrich

铟 wire, diam. 0.25 mm, 99.999% trace metals basis | Sigma-Aldrich

wire, diam. 0.25&#160;mm, 99.999% trace metals basis

铟 wire, diam. 0.25&#160;mm, 99.999% trace metals basis

A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.

In situ controlled growth of ZnIn2S4 nanosheets on reduced graphene oxide for enhanced photocatalytic hydrogen production performance.

The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD results confirm the bcc crystal structure of the as prepared In2O3 nanostructures. Strong and broad photoluminescence spectrum located at the green to red region with maximum intensity at 566 nm along with a weak ultraviolet emission at 338 nm were observed due to oxygen vacancy levels and free excitonic transitions, respectively. The valence band onset energy of 2.1 eV was observed from the XPS valence band spectrum, clearly justifies the alignment of Fermi level to the donor level created due to the presence of oxygen vacancies which were observed in the PL spectrum. The elemental ratio In:O in as prepared In2O3 was found to be 42:58 which is in close agreement with the stoichiometric value of 40:60. A downward shift was observed in the Raman peak positions due to a possible phonon confinement effect in the nanoparticles formed in bursting mechanism. Such single junction devices exhibit promising photovoltaic performance with fill factor and conversion efficiency of 21% and 0.2%, respectively, under concentrated AM1.5 illumination.

Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction.

Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed in the devices studied was 5.1 % under air mass 1.5 global (AM 1.5 G) illumination, obtained with [Ga]/[In+Ga]=0.32. The variation in PCE with composition is partly a result of bandgap tuning and optimization, but the main influence of nanocrystal composition appeared to be on the quality of the sintered films. The [Cu]/[In+Ga] content was found to be strongly influenced by the [Ga]/[In+Ga] concentration, which appears to be correlated with the morphology of the sintered film. For this reason, only small changes in the [Ga]/[In+Ga] content resulted in significant variations in device efficiency.

Influence of composition on the performance of sintered Cu(In,Ga)Se2 nanocrystal thin-film photovoltaic devices.

Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient photoluminescence (PL) emissions can be tuned widely in the range of 525-625 nm by controlling the size and composition of the QDs with the PL quantum yields (QYs) of 15-30%. These highly luminescent ZAIS QDs are less toxic due to the absence of highly toxic cadmium, and can be versatilely modified by a DHLA-PEG-based ligand. Importantly, after being modified by tumor cell-specific targeting ligands (e.g., folate and RGD peptide), the PEGylated quaternary QDs show potential applications in tumor cell imaging as a promising alternative for Cd-based QDs.

Highly luminescent water-soluble quaternary Zn-Ag-In-S quantum dots for tumor cell-targeted imaging.

A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the light shading of electrode and bonding wire, but also increase the light extraction and light output power. Contrast to CSB-LEDs, a 79% enhancement of output intensity in the WTIE-LED was obtained at 100 mA injection current. Similarly, the output power of packaged WTIE-LEDs was enhanced 59% higher compared with the packaged CSB-LEDs at the same injection condition. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power.

GaN light emitting diodes with wing-type imbedded contacts.

We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are found to increase as the thickness or doping concentration increases due to the improvement of current spreading. On the contrary, the light extraction efficiency (LEE) decreases with increasing doping concentration or n-GaN thickness by the free-carrier absorption. By combining the results of EE, IQE, and LEE, wall-plug efficiency (WPE) of the vertical LED is calculated, and the optimum thickness and doping concentration of the n-GaN layer is found for obtaining the maximum WPE.

Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.

Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k?p method for the above two planes. The theoretical calculations are consistent with the experimental results.

Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.

Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films were controlled by the deposition rate and thickness profiles of In2O3 and ZnO target. The structural, electrical and optical properties of IZO thin films were measured as functions of position. IZO thin film had the lowest resistivity and highest carrier concentration at the position of 15 mm (5.02 x 10(-4) omega cm, 3.9 x 10(20)/cm3). And IZO thin film had high transmittance in visible region at measured all positions. This study has investigated to explore the new composition of IZO films using CCS system.

Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread.

Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of the dipole interaction calculated from the Joule losses in acceptors. The maximum energy-transfer efficiency of this energy transfer system can be as high as 83%.

Efficient energy transfer from InGaN quantum wells to Ag nanoparticles.

The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method using ICl3 as a transport agent. Many vacancies and surface imperfection states have been found in the bulk and on the surface of the microplate because of the intrinsic defect nature of α-In2Se3. To discover physical and chemical properties and finding technological uses of α-In2Se3, several experiments including transmission electron miscopy (TEM), X-ray photoelectron spectroscopy (XPS), surface photovoltage (SPV), photoluminescence (PL), surface photoresponse (SPR), photoconductivity (PC), and thermoreflectance (TR) measurements have been carried out. Experimental results of TEM, XPS, SPV, PL, and SPR measurements show that a surface oxidation layer α-In2Se3-3xO3x (0 ≤ x ≤ 1) has formed on the crystal face of α-In2Se3 in environmental air with the inner layer content close to In2Se3 but the outermost layer content approaching In2O3. The near band edge transitions of α-In2Se3 microplates have been probed experimentally by TR and PC measurements. The direct band gap of α-In2Se3 has been determined to be 1.453 eV. The SPV result shows a maximum quantum efficiency of the surface oxide α-In2Se3-3xO3x (0 ≤ x ≤ 1) that presents a peak photoresponse near 2.18 eV. The analyses of SPV, SPR, PL, TR, and PC measurements revealed that the surface oxide layer facilitates the conversion of the ultraviolet to the visible range while the native defects (Se and In vacancies) sustain photoconductivity in the near-infrared region. On the basis of the experimental results a wide-energy-range photodetector that combines PC- and SPR-mode operations for α-In2Se3 microplate has been made. The testing results show a well-behaved function of photoelectric conversion in the near-infrared to ultraviolet region via the auxiliary forming of surface oxide on the crystalline face of the α-In2Se3 microplates.

Surface oxide effect on optical sensing and photoelectric conversion of α-In2Se3 hexagonal microplates.

The influence of the encapsulation of In2O3 nanorods with ZnO on the H2S gas sensing properties was studied. In2O3-core/ZnO-shell nanorods were fabricated by a two step process comprising the thermal evaporation of an 1:1 mixture of In2O3 and graphite powders and the atomic layer deposition of ZnO. The core-shell nanorods ranged from 100 to 200 nm in diameter and were up to a few hundreds of micrometers in length. The thickness of the ZnO shell layer in the core-shell nanorod ranged from 5 to 10 nm. Multiple networked In2O3-core/ZnO-shell nanorod sensors showed the response of more or less 4 times higher than bare In2O3 nanorod sensors to H2S in a concentration range of 10-100 ppm at 300 degrees C. The substantial improvement in the response of In2O3 nanorods to H2S gas by the encapsulation with ZnO can be accounted for based on the space-charge model. Besides the enhanced sensor response, both the response and recovery times of the core-shell nanorods were shorter than those of the bare-In2O3 nanorods for any H2S concentration, respectively.

Enhanced gas sensing properties of multiple networked In2O3-core/ZnO-shell nanorod sensors.

This work reports the facile growth and characterizations of In-doped ZnO hollow spheres composed of nanosheets networks and nanocones. The In-doped ZnO hollow spheres composed of nanosheets networks and nanocones were grown on Si (100) substrate by simple and non-catalytic thermal evaporation process using metallic zinc and indium powders in the presence of oxygen. The prepared materials were examined in terms of their morphological, compositional, structural and optical properties. The detailed morphological studies revealed that the synthesized products are hollow spheres composed of nanosheet networks and nanocones and grown in high-density. The observed structural properties exhibited well-crystallinity and wurtzite hexagonal phase for the grown materials. The room-temperature photoluminescence (PL) spectrum showed a broad band in the visible region with a suppressed UV emission and hence due the enhancement in the green emission, the prepared materials exhibits a great interest in the area of ZnO phosphors, such as field emissive display technology, etc.

Growth of in-doped ZnO hollow spheres composed of nanosheets networks and nanocones: structural and optical properties.

The mechanism(s) by which chronic inhalation of indium phosphide (InP) particles causes pleural fibrosis is not known. Few studies of InP pleural toxicity have been conducted because of the challenges in conducting particulate inhalation exposures, and because the pleural lesions developed slowly over the 2-year inhalation study. The authors investigated whether InP (1 mg/kg) administered by a single oropharyngeal aspiration would cause pleural fibrosis in male B6C3F1 mice. By 28 days after treatment, protein and lactate dehydrogenase (LDH) were significantly increased in bronchoalveolar lavage fluid (BALF), but were unchanged in pleural lavage fluid (PLF). A pronounced pleural effusion characterized by significant increases in cytokines and a 3.7-fold increase in cell number was detected 28 days after InP treatment. Aspiration of soluble InCl(3) caused a similar delayed pleural effusion; however, other soluble metals, insoluble particles, and fibers did not. The effusion caused by InP was accompanied by areas of pleural thickening and inflammation at day 28, and by pleural fibrosis at day 98. Aspiration of InP produced pleural fibrosis that was histologically similar to lesions caused by chronic inhalation exposure, and in a shorter time period. This oropharyngeal aspiration model was used to provide an initial characterization of the progression of pleural lesions caused by InP.

Pleural effects of indium phosphide in B6C3F1 mice: nonfibrous particulate induced pleural fibrosis.

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the In2O3 oxide is not only the active component of the structure but also acts as a diffraction cellular element. The oxide surface topology was investigated by means of the atomic-force microscope technique. It was established that the surface topology is caused by the technological conditions of growing In2O3 oxides. Under different conditions of oxidation the sample surfaces had contained nanoformations preferably in the form of nanoneedles. Their location has both a disordered and ordered character. The sizes, form and density of the nanoneedles are different, too. A dimensional optical effect in the oxide was found to be due to the anisotropic light absorption in InSe. The higher deviation of incident light from its normal direction due to a nanostructured surface is the higher variation in the generation of carriers in the semiconductor is. These changes consist in the energy broadening of the heterostructure photoresponse spectrum as well in peculiarities of the excitonic line. The higher density and ordering of the nanoneedles on the oxide surface is the higher long-wave shift and more intensive excitonic peak in spectrum takes place.

Diffraction properties of the nanostructured surface.

In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer design is inspired by the microstructure found in the firefly Photuris sp. The actual dimensions and material composition have been optimized to take into account the high refractive index of the GaN diode stack. This two-dimensional pattern contrasts other designs by its unusual profile, its larger dimensions and the fact that it can be tailored to an existing diode design rather than requiring a complete redesign of the diode geometry. The gain of light extraction reaches values up to 55% with respect to the reference unprocessed LED.

Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes.

Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.

Several metal-organic framework compounds (MOF-5, MIL-68(Ga), MIL-68(In), MIL-53(Al)) were loaded with azobenzene (AZB), as confirmed by XRPD measurements and elemental analysis. By IR spectroscopy, it was shown that the light-induced trans/cis isomerization of AZB in these hybrid host-guest compounds is improved compared to that of solid AZB. A population of the excited cis state up to 30% has been obtained for AZB0.66@MIL-68(In). However, no light-induced trans/cis isomerization was observed for AZB0.5@MIL-53(Al). Structural models obtained from high-resolution synchrotron powder diffraction data show that AZB molecules are densely packed within the channels of MIL-53(Al) so that no trans/cis isomerization can occur. A different situation was observed for AZB in the larger channels of MIL-68(Ga). Thus, this investigation shows the influence of the host material on the switching behavior of the embedded AZB molecules.

Metal-organic frameworks as hosts for photochromic guest molecules.

Highly emissive and air-stable AgInS2-ZnS quantum dots (ZAIS QDs) with quantum yields of up to 20% have been successfully synthesized directly in aqueous media in the presence of polyacrylic acid (PAA) and mercaptoacetic acid (MAA) as stabilizing and reactivity-controlling agents. The as-prepared water-dispersible ZAIS QDs are around 3 nm in size, possess the tetragonal chalcopyrite crystal structure, and exhibit long fluorescence lifetimes (>100 ns). In addition, these ZAIS QDs are found to exhibit excellent optical and colloidal stability in physiologically relevant pH values as well as very low cytotoxicity, which render them particularly suitable for biological applications. Their potential use in biological labelling of baculoviral vectors is demonstrated.

Aqueous synthesis of highly luminescent AgInS₂-ZnS quantum dots and their biological applications.

We demonstrate localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) using silver (Ag) and platinum (Pt) nanoparticles (NPs). The optical output power of NUV-LEDs with metal NPs is higher by 20.1% for NUV-LEDs with Ag NPs and 57.9% for NUV-LEDs with Pt NPs at 20 mA than that of NUV-LEDs without metal NPs. The time-resolved photoluminescence (TR-PL) spectra shows that the decay times of NUV-LEDs with Ag and Pt NPs are faster than that of NUV-LEDs without metal NPs. The TR-PL and absorbance spectra of metal NPs indicate that the spontaneous emission rate is increased by resonance coupling between excitons in the multiple quantum wells and LSPs in the metal NPs.